Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3202PBF

IRL3202PBF

MOSFET N-CH 20V 48A TO220AB

Infineon Technologies
3,554 -

RFQ

IRL3202PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V 700mV @ 250µA (Min) 43 nC @ 4.5 V ±10V 2000 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711SPBF

IRF3711SPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
2,046 -

RFQ

IRF3711SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3302PBF

IRL3302PBF

MOSFET N-CH 20V 39A TO220AB

Infineon Technologies
3,568 -

RFQ

IRL3302PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ34NLPBF

IRFZ34NLPBF

MOSFET N-CH 55V 29A TO262

Infineon Technologies
3,704 -

RFQ

IRFZ34NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44ZSPBF

IRFZ44ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
3,816 -

RFQ

IRFZ44ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL8113PBF

IRL8113PBF

MOSFET N-CH 30V 105A TO220AB

Infineon Technologies
3,969 -

RFQ

IRL8113PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZSPBF

IRFZ46ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,397 -

RFQ

IRFZ46ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLIZ24NPBF

IRLIZ24NPBF

MOSFET N-CH 55V 14A TO220AB FP

Infineon Technologies
2,076 -

RFQ

IRLIZ24NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4V, 10V 60mOhm @ 8.4A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 26W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO262

Infineon Technologies
3,190 -

RFQ

IRF9Z24NLPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113SPBF

IRL8113SPBF

MOSFET N-CH 30V 105A D2PAK

Infineon Technologies
3,722 -

RFQ

IRL8113SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709SPBF

IRF3709SPBF

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
3,039 -

RFQ

IRF3709SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709LPBF

IRF3709LPBF

MOSFET N-CH 30V 90A TO262

Infineon Technologies
2,030 -

RFQ

IRF3709LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709ZLPBF

IRF3709ZLPBF

MOSFET N-CH 30V 87A TO262

Infineon Technologies
3,035 -

RFQ

IRF3709ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706PBF

IRF3706PBF

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
3,083 -

RFQ

IRF3706PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708PBF

IRF3708PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,310 -

RFQ

IRF3708PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZSPBF

IRF3709ZSPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
2,300 -

RFQ

IRF3709ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707PBF

IRF3707PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,572 -

RFQ

IRF3707PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NSPBF

IRFZ34NSPBF

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
3,960 -

RFQ

IRFZ34NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48ZSPBF

IRFZ48ZSPBF

MOSFET N-CH 55V 61A D2PAK

Infineon Technologies
2,538 -

RFQ

IRFZ48ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707LPBF

IRF3707LPBF

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,580 -

RFQ

IRF3707LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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