Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3803VPBF

IRL3803VPBF

MOSFET N-CH 30V 140A TO220AB

Infineon Technologies
2,318 -

RFQ

IRL3803VPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 5.5mOhm @ 71A, 10V 1V @ 250µA 76 nC @ 4.5 V ±16V 3720 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR24N15DPBF

IRFR24N15DPBF

MOSFET N-CH 150V 24A DPAK

Infineon Technologies
3,426 -

RFQ

IRFR24N15DPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 24A (Tc) 10V 95mOhm @ 14A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 890 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3007SPBF

IRF3007SPBF

MOSFET N-CH 75V 62A D2PAK

Infineon Technologies
2,174 -

RFQ

IRF3007SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3915PBF

IRLR3915PBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
2,595 -

RFQ

IRLR3915PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3911PBF

IRFU3911PBF

MOSFET N-CH 100V 14A IPAK

Infineon Technologies
2,453 -

RFQ

IRFU3911PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 115mOhm @ 8.4A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 740 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3411PBF

IRFR3411PBF

MOSFET N-CH 100V 32A DPAK

Infineon Technologies
2,479 -

RFQ

IRFR3411PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3505PBF

IRFR3505PBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
3,038 -

RFQ

IRFR3505PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2030 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR15N20DPBF

IRFR15N20DPBF

MOSFET N-CH 200V 17A DPAK

Infineon Technologies
3,753 -

RFQ

IRFR15N20DPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 3W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU4104PBF

IRFU4104PBF

MOSFET N-CH 40V 42A IPAK

Infineon Technologies
3,648 -

RFQ

IRFU4104PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6218PBF

IRF6218PBF

MOSFET P-CH 150V 27A TO220AB

Infineon Technologies
2,984 -

RFQ

IRF6218PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3412PBF

IRFU3412PBF

MOSFET N-CH 100V 48A IPAK

Infineon Technologies
3,975 -

RFQ

IRFU3412PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSP88H6327XTSA1

BSP88H6327XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
2,415 -

RFQ

BSP88H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 2.8V, 10V 6Ohm @ 350mA, 10V 1.4V @ 108µA 6.8 nC @ 10 V ±20V 95 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPZ40N04S5L7R4ATMA1

IPZ40N04S5L7R4ATMA1

MOSFET N-CH 40V 40A 8TSDSON

Infineon Technologies
3,917 -

RFQ

IPZ40N04S5L7R4ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 7.4mOhm @ 20A, 10V 2V @ 10µA 17 nC @ 10 V ±16V 920 pF @ 25 V - 34W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70R1K4P7SAUMA1

IPD70R1K4P7SAUMA1

MOSFET N-CH 700V 4A TO252-3

Infineon Technologies
2,089 -

RFQ

IPD70R1K4P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R1K5CEAUMA1

IPD60R1K5CEAUMA1

MOSFET N-CH 650V 5A TO252

Infineon Technologies
2,434 -

RFQ

IPD60R1K5CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 49W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFU3418PBF

IRFU3418PBF

MOSFET N-CH 80V 70A IPAK

Infineon Technologies
2,923 -

RFQ

IRFU3418PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ48VPBF

IRFIZ48VPBF

MOSFET N-CH 60V 39A TO220AB FP

Infineon Technologies
2,691 -

RFQ

IRFIZ48VPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 39A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710ZLPBF

IRF3710ZLPBF

MOSFET N-CH 100V 59A TO262

Infineon Technologies
3,346 -

RFQ

IRF3710ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710ZSPBF

IRF3710ZSPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
2,679 -

RFQ

IRF3710ZSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3412PBF

IRFR3412PBF

MOSFET N-CH 100V 48A DPAK

Infineon Technologies
3,357 -

RFQ

IRFR3412PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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