Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6611TR1

IRF6611TR1

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,595 -

RFQ

IRF6611TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 150A (Tc) 4.5V, 10V 2.6mOhm @ 27A, 10V 2.25V @ 250µA 56 nC @ 4.5 V ±20V 4860 pF @ 15 V - 3.9W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6616TR1

IRF6616TR1

MOSFET N-CH 30V 19A DIRECTFET

Infineon Technologies
3,569 -

RFQ

IRF6616TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6621TR1

IRF6621TR1

MOSFET N-CH 30V 12A DIRECTFET

Infineon Technologies
3,059 -

RFQ

IRF6621TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V 2.25V @ 250µA 17.5 nC @ 4.5 V ±20V 1460 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6626TR1

IRF6626TR1

MOSFET N-CH 30V 16A DIRECTFET

Infineon Technologies
2,591 -

RFQ

IRF6626TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 72A (Tc) 4.5V, 10V 5.4mOhm @ 16A, 10V 2.35V @ 250µA 29 nC @ 4.5 V ±20V 2380 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6636TR1

IRF6636TR1

MOSFET N-CH 20V 18A DIRECTFET

Infineon Technologies
3,779 -

RFQ

IRF6636TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6637TR1

IRF6637TR1

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
3,119 -

RFQ

IRF6637TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 59A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1330 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6646TR1

IRF6646TR1

MOSFET N-CH 80V 12A DIRECTFET

Infineon Technologies
2,259 -

RFQ

IRF6646TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 68A (Tc) 10V 9.5mOhm @ 12A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2060 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6678TR1

IRF6678TR1

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
3,936 -

RFQ

IRF6678TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.25V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1902PBF

IRF1902PBF

MOSFET N-CH 20V 4.2A 8SO

Infineon Technologies
3,052 -

RFQ

IRF1902PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.7V, 4.5V 85mOhm @ 4A, 4.5V 700mV @ 250µA 7.5 nC @ 4.5 V ±12V 310 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU7807ZPBF

IRLU7807ZPBF

MOSFET N-CH 30V 43A I-PAK

Infineon Technologies
3,811 -

RFQ

IRLU7807ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707ZPBF

IRFU3707ZPBF

MOSFET N-CH 30V 56A IPAK

Infineon Technologies
3,898 -

RFQ

IRFU3707ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7475PBF

IRF7475PBF

MOSFET N-CH 12V 11A 8SO

Infineon Technologies
2,058 -

RFQ

IRF7475PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.8V, 4.5V 15mOhm @ 8.8A, 4.5V 2V @ 250µA 19 nC @ 4.5 V ±12V 1590 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3715ZPBF

IRLU3715ZPBF

MOSFET N-CH 20V 49A I-PAK

Infineon Technologies
2,596 -

RFQ

IRLU3715ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 49A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 810 pF @ 10 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3704ZPBF

IRFU3704ZPBF

MOSFET N-CH 20V 60A IPAK

Infineon Technologies
2,806 -

RFQ

IRFU3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3105PBF

IRLR3105PBF

MOSFET N-CH 55V 25A DPAK

Infineon Technologies
2,241 -

RFQ

IRLR3105PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±16V 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3709ZPBF

IRFU3709ZPBF

MOSFET N-CH 30V 86A IPAK

Infineon Technologies
2,786 -

RFQ

IRFU3709ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2330 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7828PBF

IRF7828PBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
3,210 -

RFQ

IRF7828PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V 12.5mOhm @ 10A, 4.5V 1V @ 250µA 14 nC @ 5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR7811WPBF

IRLR7811WPBF

MOSFET N-CH 30V 64A DPAK

Infineon Technologies
3,690 -

RFQ

IRLR7811WPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V 2.5V @ 250µA 31 nC @ 4.5 V ±12V 2260 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZCLPBF

IRL3715ZCLPBF

MOSFET N-CH 20V 50A TO262

Infineon Technologies
2,821 -

RFQ

IRL3715ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZLPBF

IRF3704ZLPBF

MOSFET N-CH 20V 67A TO262

Infineon Technologies
3,035 -

RFQ

IRF3704ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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