Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3704ZPBF

IRF3704ZPBF

MOSFET N-CH 20V 67A TO220AB

Infineon Technologies
2,712 -

RFQ

IRF3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZSPBF

IRF3704ZSPBF

MOSFET N-CH 20V 67A D2PAK

Infineon Technologies
2,454 -

RFQ

IRF3704ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3802PBF

IRLU3802PBF

MOSFET N-CH 12V 84A I-PAK

Infineon Technologies
2,135 -

RFQ

IRLU3802PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7488PBF

IRF7488PBF

MOSFET N-CH 80V 6.3A 8SO

Infineon Technologies
3,314 -

RFQ

IRF7488PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) - Surface Mount
IRF7490PBF

IRF7490PBF

MOSFET N-CH 100V 5.4A 8SO

Infineon Technologies
2,165 -

RFQ

IRF7490PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 5.4A (Ta) 10V 39mOhm @ 3.2A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1720 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3717PBF

IRLU3717PBF

MOSFET N-CH 20V 120A I-PAK

Infineon Technologies
2,882 -

RFQ

IRLU3717PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3717PBF

IRLR3717PBF

MOSFET N-CH 20V 120A DPAK

Infineon Technologies
3,914 -

RFQ

IRLR3717PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3915PBF

IRLU3915PBF

MOSFET N-CH 55V 30A IPAK

Infineon Technologies
2,926 -

RFQ

IRLU3915PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8113PBF

IRLU8113PBF

MOSFET N-CH 30V 94A I-PAK

Infineon Technologies
3,595 -

RFQ

IRLU8113PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 94A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.25V @ 250µA 32 nC @ 4.5 V ±20V 2920 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3802PBF

IRLR3802PBF

MOSFET N-CH 12V 84A DPAK

Infineon Technologies
2,330 -

RFQ

IRLR3802PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU8203PBF

IRLU8203PBF

MOSFET N-CH 30V 110A I-PAK

Infineon Technologies
2,584 -

RFQ

IRLU8203PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 110A (Tc) 4.5V, 10V 6.8mOhm @ 15A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 2430 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3504PBF

IRFU3504PBF

MOSFET N-CH 40V 30A IPAK

Infineon Technologies
3,927 -

RFQ

IRFU3504PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3518PBF

IRFR3518PBF

MOSFET N-CH 80V 38A DPAK

Infineon Technologies
3,882 -

RFQ

IRFR3518PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 38A (Tc) 10V 29mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1710 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR48ZPBF

IRFR48ZPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,631 -

RFQ

IRFR48ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU15N20DPBF

IRFU15N20DPBF

MOSFET N-CH 200V 17A IPAK

Infineon Technologies
2,510 -

RFQ

IRFU15N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU48ZPBF

IRFU48ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
3,654 -

RFQ

IRFU48ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR2908PBF

IRLR2908PBF

MOSFET N-CH 80V 30A DPAK

Infineon Technologies
2,742 -

RFQ

IRLR2908PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3504PBF

IRFR3504PBF

MOSFET N-CH 40V 30A DPAK

Infineon Technologies
2,748 -

RFQ

IRFR3504PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7484PBF

IRF7484PBF

MOSFET N-CH 40V 14A 8SO

Infineon Technologies
3,318 -

RFQ

IRF7484PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL7833LPBF

IRL7833LPBF

MOSFET N-CH 30V 150A TO262

Infineon Technologies
2,055 -

RFQ

IRL7833LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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