Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3805

IRF3805

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,956 -

RFQ

IRF3805

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3805S

IRF3805S

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,073 -

RFQ

IRF3805S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1010Z

IRFR1010Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,495 -

RFQ

IRFR1010Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2307Z

IRFR2307Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,259 -

RFQ

IRFR2307Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2607Z

IRFR2607Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,807 -

RFQ

IRFR2607Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3507

IRFS3507

MOSFET N-CH 75V 97A D2PAK

Infineon Technologies
3,260 -

RFQ

IRFS3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU1010Z

IRFU1010Z

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
3,880 -

RFQ

IRFU1010Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3705Z

IRLR3705Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,620 -

RFQ

IRLR3705Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3705Z

IRLU3705Z

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
2,459 -

RFQ

IRLU3705Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6613TR1

IRF6613TR1

MOSFET N-CH 40V 23A DIRECTFET

Infineon Technologies
3,437 -

RFQ

IRF6613TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 150A (Tc) 4.5V, 10V 3.4mOhm @ 23A, 10V 2.25V @ 250µA 63 nC @ 4.5 V ±20V 5950 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7410PBF

IRF7410PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies
3,807 -

RFQ

IRF7410PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807ZPBF

IRF7807ZPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
1,710 -

RFQ

IRF7807ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.8mOhm @ 11A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 770 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF1405ZSTRL-7P

IRF1405ZSTRL-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
2,725 -

RFQ

IRF1405ZSTRL-7P

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR9343PBF

IRLR9343PBF

MOSFET P-CH 55V 20A DPAK

Infineon Technologies
2,089 -

RFQ

IRLR9343PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRF7342D2PBF

IRF7342D2PBF

MOSFET P-CH 55V 3.4A 8SO

Infineon Technologies
3,053 -

RFQ

IRF7342D2PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 55 V 3.4A (Ta) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 38 nC @ 10 V ±20V 690 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3709ZPBF

IRF3709ZPBF

MOSFET N-CH 30V 87A TO220AB

Infineon Technologies
2,999 -

RFQ

IRF3709ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3711ZPBF

IRFU3711ZPBF

MOSFET N-CH 20V 93A IPAK

Infineon Technologies
3,834 -

RFQ

IRFU3711ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSS138NH6327XTSA2

BSS138NH6327XTSA2

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies
3,863 -

RFQ

BSS138NH6327XTSA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V 1.4V @ 26µA 1.4 nC @ 10 V ±20V 41 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138WH6327XTSA1

BSS138WH6327XTSA1

MOSFET N-CH 60V 280MA SOT323-3

Infineon Technologies
771 -

RFQ

BSS138WH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 4.5V, 10V 3.5Ohm @ 200mA, 10V 1.4V @ 26µA 1.5 nC @ 10 V ±20V 43 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS308PEH6327XTSA1

BSS308PEH6327XTSA1

MOSFET P-CH 30V 2A SOT23-3

Infineon Technologies
3,206 -

RFQ

BSS308PEH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 80mOhm @ 2A, 10V 2V @ 11µA 5 nC @ 10 V ±20V 500 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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