Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2804STRL-7P

IRF2804STRL-7P

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,717 -

RFQ

IRF2804STRL-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4232PBF

IRFP4232PBF

MOSFET N-CH 250V 60A TO247AC

Infineon Technologies
2,205 -

RFQ

IRFP4232PBF

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 35.7mOhm @ 42A, 10V 5V @ 250µA 240 nC @ 10 V ±20V 7290 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF7495PBF

IRF7495PBF

MOSFET N-CH 100V 7.3A 8SO

Infineon Technologies
3,377 -

RFQ

IRF7495PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB3307

IRFB3307

MOSFET N-CH 75V 130A TO220AB

Infineon Technologies
2,269 -

RFQ

IRFB3307

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC027N04LSGATMA1

BSC027N04LSGATMA1

MOSFET N-CH 40V 24A/100A TDSON

Infineon Technologies
4,980 -

RFQ

BSC027N04LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V 2V @ 49µA 85 nC @ 10 V ±20V 6800 pF @ 20 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI65R190C6XKSA1

IPI65R190C6XKSA1

IPI65R190C6 - 650V-700V COOLMOS

Infineon Technologies
517 -

RFQ

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB100N04S2-04

IPB100N04S2-04

IPB100N04 - 20V-40V N-CHANNEL AU

Infineon Technologies
499 -

RFQ

IPB100N04S2-04

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW16N50C3

SPW16N50C3

SPW16N50 - 500V COOLMOS N-CHANNE

Infineon Technologies
270 -

RFQ

SPW16N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB011N04LGATMA1

IPB011N04LGATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,592 -

RFQ

IPB011N04LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.1mOhm @ 100A, 10V 2V @ 200µA 346 nC @ 10 V ±20V 29000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409

AUIRFS8409

AUIRFS8409 - 20V-40V N-CHANNEL A

Infineon Technologies
286 -

RFQ

AUIRFS8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA21N50C3XKSA1

SPA21N50C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies
747 -

RFQ

SPA21N50C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFP1405

AUIRFP1405

AUIRFP1405 - 55V-60V N-CHANNEL A

Infineon Technologies
800 -

RFQ

AUIRFP1405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1324STRL

AUIRF1324STRL

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies
466 -

RFQ

AUIRF1324STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5053TRPBF

IRFH5053TRPBF

MOSFET N-CH 100V 9.3A/46A PQFN

Infineon Technologies
205 -

RFQ

IRFH5053TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 46A (Tc) 10V 18mOhm @ 9.3A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1510 pF @ 50 V - 3.1W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6643TRPBF

IRF6643TRPBF

MOSFET N-CH 150V 6.2A DIRECTFET

Infineon Technologies
14,762 -

RFQ

IRF6643TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 6.2A (Ta), 35A (Tc) 10V 34.5mOhm @ 7.6A, 10V 4.9V @ 150µA 55 nC @ 10 V ±20V 2340 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFS3206TRL

AUIRFS3206TRL

AUIRFS3206 - 55V-60V N-CHANNEL A

Infineon Technologies
139 -

RFQ

AUIRFS3206TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R125C7

IPA65R125C7

IPA65R125 - 650V AND 700V COOLMO

Infineon Technologies
412 -

RFQ

IPA65R125C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R125C7

IPP65R125C7

IPP65R125 - 650V AND 700V COOLMO

Infineon Technologies
143 -

RFQ

IPP65R125C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET_(120V,300V)

Infineon Technologies
662 -

RFQ

AUIRFS4115-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1404STRL

AUIRF1404STRL

MOSFET_(20V,40V)

Infineon Technologies
800 -

RFQ

AUIRF1404STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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