Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLML0030TRPBF

IRLML0030TRPBF

MOSFET N-CH 30V 5.3A SOT23

Infineon Technologies
3,551 -

RFQ

IRLML0030TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 27mOhm @ 5.2A, 10V 2.3V @ 25µA 2.6 nC @ 4.5 V ±20V 382 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS131H6327XTSA1

BSS131H6327XTSA1

MOSFET N-CH 240V 110MA SOT23-3

Infineon Technologies
3,318 -

RFQ

BSS131H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 110mA (Ta) 4.5V, 10V 14Ohm @ 100mA, 10V 1.8V @ 56µA 3.1 nC @ 10 V ±20V 77 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS127H6327XTSA2

BSS127H6327XTSA2

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
3,558 -

RFQ

BSS127H6327XTSA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) 4.5V, 10V 500Ohm @ 16mA, 10V 2.6V @ 8µA 1 nC @ 10 V ±20V 28 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS83PH6327XTSA1

BSS83PH6327XTSA1

MOSFET P-CH 60V 330MA SOT23-3

Infineon Technologies
3,679 -

RFQ

BSS83PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 2Ohm @ 330mA, 10V 2V @ 80µA 3.57 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML6401TRPBF

IRLML6401TRPBF

MOSFET P-CH 12V 4.3A SOT23

Infineon Technologies
2,278 -

RFQ

IRLML6401TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 4.3A (Ta) 1.8V, 4.5V 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V 830 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0100TRPBF

IRLML0100TRPBF

MOSFET N-CH 100V 1.6A SOT23

Infineon Technologies
2,387 -

RFQ

IRLML0100TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Ta) 4.5V, 10V 220mOhm @ 1.6A, 10V 2.5V @ 25µA 2.5 nC @ 4.5 V ±16V 290 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS139H6327XTSA1

BSS139H6327XTSA1

MOSFET N-CH 250V 100MA SOT23-3

Infineon Technologies
2,551 -

RFQ

BSS139H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 250 V 100mA (Ta) 0V, 10V 14Ohm @ 100µA, 10V 1V @ 56µA 3.5 nC @ 5 V ±20V 76 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF1010ZSPBF

IRF1010ZSPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,114 -

RFQ

IRF1010ZSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6635TR1

IRF6635TR1

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
2,361 -

RFQ

IRF6635TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 250µA 71 nC @ 4.5 V ±20V 5970 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6635

IRF6635

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,773 -

RFQ

IRF6635

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 250µA 71 nC @ 4.5 V ±20V 5970 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFB4212PBF

IRFB4212PBF

MOSFET N-CH 100V 18A TO220AB

Infineon Technologies
2,563 -

RFQ

IRFB4212PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 72.5mOhm @ 13A, 10V 5V @ 250µA 23 nC @ 10 V ±20V 550 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6611

IRF6611

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,810 -

RFQ

IRF6611

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 150A (Tc) 4.5V, 10V 2.6mOhm @ 27A, 10V 2.25V @ 250µA 56 nC @ 4.5 V ±20V 4860 pF @ 15 V - 3.9W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6626

IRF6626

MOSFET N-CH 30V 16A DIRECTFET

Infineon Technologies
3,361 -

RFQ

IRF6626

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 72A (Tc) 4.5V, 10V 5.4mOhm @ 16A, 10V 2.35V @ 250µA 29 nC @ 4.5 V ±20V 2380 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6636

IRF6636

MOSFET N-CH 20V 18A DIRECTFET

Infineon Technologies
3,374 -

RFQ

IRF6636

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF2907ZS-7PPBF

IRF2907ZS-7PPBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies
2,696 -

RFQ

IRF2907ZS-7PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7416PBF

IRF7416PBF

MOSFET P-CH 30V 10A 8SO

Infineon Technologies
2,045 -

RFQ

IRF7416PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 1V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
62-0063PBF

62-0063PBF

MOSFET N-CH 12V 15A 8SO

Infineon Technologies
2,138 -

RFQ

62-0063PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 15A (Ta) 2.8V, 4.5V 8mOhm @ 15A, 4.5V 1.9V @ 250µA 40 nC @ 4.5 V ±12V 2550 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7832Z

IRF7832Z

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
2,555 -

RFQ

IRF7832Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.35V @ 250µA 45 nC @ 4.5 V ±20V 3860 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS52N15DPBF

IRFS52N15DPBF

MOSFET N-CH 150V 51A D2PAK

Infineon Technologies
2,360 -

RFQ

IRFS52N15DPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6610TR1

IRF6610TR1

MOSFET N-CH 20V 15A DIRECTFET

Infineon Technologies
2,135 -

RFQ

IRF6610TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta), 66A (Tc) 4.5V, 10V 6.8mOhm @ 15A, 10V 2.55V @ 250µA 17 nC @ 4.5 V ±20V 1520 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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