Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS8403

AUIRFS8403

AUIRFS8403 - 20V-40V N-CHANNEL A

Infineon Technologies
6,000 -

RFQ

AUIRFS8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1010ZL

AUIRF1010ZL

AUIRF1010 - 55V-60V N-CHANNEL AU

Infineon Technologies
5,000 -

RFQ

AUIRF1010ZL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB280N15NZ3G

BSB280N15NZ3G

BSB280N15 - 12V-300V N-CHANNEL P

Infineon Technologies
546 -

RFQ

BSB280N15NZ3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPL65R195C7AUMA1

IPL65R195C7AUMA1

MOSFET N-CH 650V 12A 4VSON

Infineon Technologies
3,267 -

RFQ

IPL65R195C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI11N60C3XKSA1

SPI11N60C3XKSA1

SPI11N60C3 - 600V COOLMOS N-CHAN

Infineon Technologies
2,500 -

RFQ

SPI11N60C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRL3705N

AUIRL3705N

AUIRL3705 - 55V-60V N-CHANNEL AU

Infineon Technologies
5,600 -

RFQ

AUIRL3705N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) - 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V - 3600 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R280CFDD7

IPA60R280CFDD7

IPA60R280 - 600V COOLMOS N-CHANN

Infineon Technologies
500 -

RFQ

IPA60R280CFDD7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA65R225C7

IPA65R225C7

IPA65R225 - 650V AND 700V COOLMO

Infineon Technologies
1,360 -

RFQ

IPA65R225C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRL1404ZS

AUIRL1404ZS

AUIRL1404ZS - 20V-40V N-CHANNEL

Infineon Technologies
1,000 -

RFQ

AUIRL1404ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI60R250CP

IPI60R250CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
474 -

RFQ

IPI60R250CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB65R190CFD7AATMA1

IPB65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-3

Infineon Technologies
2,418 -

RFQ

IPB65R190CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPDD60R150G7XTMA1

IPDD60R150G7XTMA1

MOSFET N-CH 600V 16A HDSOP-10

Infineon Technologies
3,672 -

RFQ

IPDD60R150G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 150mOhm @ 5.3A, 10V 4V @ 260µA 23 nC @ 10 V ±20V 902 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R180C7

IPA60R180C7

9A, 600V, 0.18OHM, N-CHANNEL MOS

Infineon Technologies
351 -

RFQ

IPA60R180C7

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
SP000681054

SP000681054

SPP15N65C3HKSA1 - COOLMOS N-CHAN

Infineon Technologies
3,000 -

RFQ

SP000681054

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA65R190C7

IPA65R190C7

IPA65R190 - 650V AND 700V COOLMO

Infineon Technologies
424 -

RFQ

IPA65R190C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
64-9146

64-9146

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies
2,786 -

RFQ

64-9146

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF3305

IRF3305

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,659 -

RFQ

IRF3305

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4215

IRFB4215

MOSFET N-CH 60V 115A TO220AB

Infineon Technologies
2,538 -

RFQ

IRFB4215

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115A (Tc) 10V 9mOhm @ 54A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4080 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL024Z

IRLL024Z

MOSFET N-CH 55V 5A SOT223

Infineon Technologies
2,711 -

RFQ

IRLL024Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF450

IRF450

MOSFET N-CH 500V 12A TO204AA

Infineon Technologies
3,456 -

RFQ

IRF450

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2700 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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