Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI65R310CFDXKSA1700

IPI65R310CFDXKSA1700

IPI65R310 - 650V AND 700V COOLMO

Infineon Technologies
1,500 -

RFQ

IPI65R310CFDXKSA1700

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80N04S4-03

IPI80N04S4-03

IPI80N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
350 -

RFQ

IPI80N04S4-03

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB008NE2LXXUMA1

BSB008NE2LXXUMA1

MOSFET N-CH 25V 46A/180A 2WDSON

Infineon Technologies
123 -

RFQ

BSB008NE2LXXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 46A (Ta), 180A (Tc) 4.5V, 10V 0.8mOhm @ 30A, 10V 2V @ 250µA 343 nC @ 10 V ±20V 16000 pF @ 12 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC010N04LSATMA1

BSC010N04LSATMA1

MOSFET N-CH 40V 38A/100A TDSON

Infineon Technologies
2,675 -

RFQ

BSC010N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2V @ 250µA 95 nC @ 10 V ±20V 6800 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2807ZSTRLPBF

IRF2807ZSTRLPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
233 -

RFQ

IRF2807ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7483MTRPBF

IRF7483MTRPBF

IRF7483 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,799 -

RFQ

IRF7483MTRPBF

Ficha técnica

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 135A (Tc) 6V, 10V 2.3mOhm @ 81A, 10V 3.9V @ 100µA 81 nC @ 10 V ±20V 3913 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSF134N10NJ3G

BSF134N10NJ3G

BSF134N10 - 12V-300V N-CHANNEL P

Infineon Technologies
7,476 -

RFQ

BSF134N10NJ3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6894MTRPBF

IRF6894MTRPBF

IRF6894 - 12V-300V N-CHANNEL POW

Infineon Technologies
1,000 -

RFQ

IRF6894MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V 2.1V @ 100µA 39 nC @ 4.5 V ±16V 4160 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF9Z34NLPBF

IRF9Z34NLPBF

PLANAR 40<-<100V

Infineon Technologies
335 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R380P6

IPA60R380P6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
313 -

RFQ

IPA60R380P6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF7480MTRPBF

IRF7480MTRPBF

MOSFET N-CH 40V 217A DIRECTFET

Infineon Technologies
2,128 -

RFQ

IRF7480MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 217A (Tc) 6V, 10V 1.2mOhm @ 132A, 10V 3.9V @ 150µA 185 nC @ 10 V ±20V 6680 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7437TRL7PP

IRFS7437TRL7PP

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
551 -

RFQ

IRFS7437TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IQE008N03LM5CGATMA1

IQE008N03LM5CGATMA1

TRENCH <= 40V PG-TTFN-9

Infineon Technologies
747 -

RFQ

IQE008N03LM5CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 253A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V 2V @ 250µA 64 nC @ 10 V ±16V 5700 pF @ 15 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
IQE008N03LM5ATMA1

IQE008N03LM5ATMA1

TRENCH <= 40V PG-TSON-8

Infineon Technologies
464 -

RFQ

IQE008N03LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 253A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V 2V @ 250µA 64 nC @ 10 V ±16V 5700 pF @ 15 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC005N03LS5IATMA1

BSC005N03LS5IATMA1

TRENCH <= 40V

Infineon Technologies
2,616 -

RFQ

BSC005N03LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Ta), 433A (Tc) 4.5V, 10V 0.55mOhm @ 50A, 10V 2V @ 10mA 128 nC @ 10 V ±20V 8000 pF @ 15 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS52N15DTRLP

IRFS52N15DTRLP

MOSFET N-CH 150V 51A D2PAK

Infineon Technologies
250 -

RFQ

IRFS52N15DTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3315S

AUIRF3315S

AUIRF3315 - 120V-300V N-CHANNEL

Infineon Technologies
4,720 -

RFQ

AUIRF3315S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC070N10NS5SCATMA1

BSC070N10NS5SCATMA1

MOSFET N-CH 100V 14A/82A 8SWSON

Infineon Technologies
3,562 -

RFQ

BSC070N10NS5SCATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 82A (Tc) 6V, 10V 7mOhm @ 40A, 10V 3.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 50 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707ZCSTRR

IRF3707ZCSTRR

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,087 -

RFQ

IRF3707ZCSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707ZSTRL

IRF3707ZSTRL

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,538 -

RFQ

IRF3707ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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