Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6617TR1

IRF6617TR1

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,847 -

RFQ

IRF6617TR1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6620TR1

IRF6620TR1

MOSFET N-CH 20V 27A DIRECTFET

Infineon Technologies
2,586 -

RFQ

IRF6620TR1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.7mOhm @ 27A, 10V 2.45V @ 250µA 42 nC @ 4.5 V ±20V 4130 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6623TR1

IRF6623TR1

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies
2,390 -

RFQ

IRF6623TR1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1360 pF @ 10 V - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6691TR1

IRF6691TR1

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies
2,191 -

RFQ

IRF6691TR1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR120ZTR

IRFR120ZTR

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
3,787 -

RFQ

IRFR120ZTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404ZSTRL

IRF1404ZSTRL

MOSFET N-CH 40V 180A D2PAK

Infineon Technologies
2,359 -

RFQ

IRF1404ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404ZSTRR

IRF1404ZSTRR

MOSFET N-CH 40V 180A D2PAK

Infineon Technologies
2,437 -

RFQ

IRF1404ZSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104TR

IRFR4104TR

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,105 -

RFQ

IRFR4104TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104TRL

IRFR4104TRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,216 -

RFQ

IRFR4104TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104TRR

IRFR4104TRR

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,765 -

RFQ

IRFR4104TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010EZ

IRF1010EZ

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies
2,176 -

RFQ

IRF1010EZ

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010Z

IRF1010Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,587 -

RFQ

IRF1010Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-2042

64-2042

MOSFET N-CH 40V 75A TO262

Infineon Technologies
3,404 -

RFQ

64-2042

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104

IRF4104

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
2,262 -

RFQ

IRF4104

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540Z

IRF540Z

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
3,095 -

RFQ

IRF540Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIB4343

IRLIB4343

MOSFET N-CH 55V 19A TO220AB FP

Infineon Technologies
2,172 -

RFQ

IRLIB4343

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 39W (Tc) -40°C ~ 175°C (TJ) Through Hole
AUIRFN7107TR

AUIRFN7107TR

AUIRFN7107 - 75V-100V N-CHANNEL

Infineon Technologies
8,000 -

RFQ

AUIRFN7107TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) 10V 8.5mOhm @ 45A, 10V 4V @ 100µA 77 nC @ 10 V ±20V 3001 pF @ 25 V - 4.4W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB22N03S4L-15

IPB22N03S4L-15

IPB22N03 - 20V-40V N-CHANNEL AUT

Infineon Technologies
1,373 -

RFQ

IPB22N03S4L-15

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS38N20DTRLP

IRFS38N20DTRLP

MOSFET N-CH 200V 43A D2PAK

Infineon Technologies
3,631 -

RFQ

IRFS38N20DTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPDD60R190G7XTMA1

IPDD60R190G7XTMA1

MOSFET N-CH 600V 13A HDSOP-10

Infineon Technologies
169 -

RFQ

IPDD60R190G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 190mOhm @ 4.2A, 10V 4V @ 210µA 18 nC @ 10 V ±20V 718 pF @ 400 V - 76W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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