Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPA20N65C3XK

SPA20N65C3XK

SPA20N65 - 650V AND 700V COOLMOS

Infineon Technologies
165 -

RFQ

SPA20N65C3XK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUA250N04S6N007AUMA1

IAUA250N04S6N007AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies
2,769 -

RFQ

IAUA250N04S6N007AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7mOhm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZ65R095C7

IPZ65R095C7

IPZ65R095 - 650V AND 700V COOLMO

Infineon Technologies
410 -

RFQ

IPZ65R095C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFP2907

AUIRFP2907

AUIRFP2907 - 75V-100V N-CHANNEL

Infineon Technologies
450 -

RFQ

AUIRFP2907

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB11N60C3ATMA1

SPB11N60C3ATMA1

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies
2,029 -

RFQ

SPB11N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB3507

IRFB3507

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies
2,073 -

RFQ

IRFB3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3507PBF

IRFB3507PBF

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies
3,741 -

RFQ

IRFB3507PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410

IRFB4410

MOSFET N-CH 100V 96A TO220AB

Infineon Technologies
2,482 -

RFQ

IRFB4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4610

IRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies
3,191 -

RFQ

IRFB4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3307

IRFS3307

MOSFET N-CH 75V 130A D2PAK

Infineon Technologies
2,507 -

RFQ

IRFS3307

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410

IRFS4410

MOSFET N-CH 100V 96A D2PAK

Infineon Technologies
2,962 -

RFQ

IRFS4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610

IRFS4610

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
3,291 -

RFQ

IRFS4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610PBF

IRFS4610PBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
3,568 -

RFQ

IRFS4610PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207

IRFSL3207

MOSFET N-CH 75V 180A TO262

Infineon Technologies
3,968 -

RFQ

IRFSL3207

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3307

IRFSL3307

MOSFET N-CH 75V 130A TO262

Infineon Technologies
3,137 -

RFQ

IRFSL3307

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3507

IRFSL3507

MOSFET N-CH 75V 97A TO262

Infineon Technologies
3,779 -

RFQ

IRFSL3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410

IRFSL4410

MOSFET N-CH 100V 96A TO262

Infineon Technologies
3,484 -

RFQ

IRFSL4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4610

IRFSL4610

MOSFET N-CH 100V 73A TO262

Infineon Technologies
2,083 -

RFQ

IRFSL4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4610PBF

IRFSL4610PBF

MOSFET N-CH 100V 73A TO262

Infineon Technologies
3,964 -

RFQ

IRFSL4610PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZS-7P

IRF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,570 -

RFQ

IRF1405ZS-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 4849505152535455...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário