Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1503PBF

IRF1503PBF

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies
2,748 -

RFQ

IRF1503PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3713PBF

IRL3713PBF

MOSFET N-CH 30V 260A TO220AB

Infineon Technologies
2,098 -

RFQ

IRL3713PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2204LPBF

IRF2204LPBF

MOSFET N-CH 40V 170A TO262

Infineon Technologies
3,485 -

RFQ

IRF2204LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1503LPBF

IRF1503LPBF

MOSFET N-CH 30V 75A TO262

Infineon Technologies
3,130 -

RFQ

IRF1503LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4710PBF

IRFSL4710PBF

MOSFET N-CH 100V 75A TO262

Infineon Technologies
3,194 -

RFQ

IRFSL4710PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3716LPBF

IRL3716LPBF

MOSFET N-CH 20V 180A TO262

Infineon Technologies
2,581 -

RFQ

IRL3716LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF8010SPBF

IRF8010SPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
3,323 -

RFQ

IRF8010SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2805LPBF

IRF2805LPBF

MOSFET N-CH 55V 135A TO262

Infineon Technologies
2,872 -

RFQ

IRF2805LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1503SPBF

IRF1503SPBF

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies
2,391 -

RFQ

IRF1503SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3808LPBF

IRF3808LPBF

MOSFET N-CH 75V 106A TO262

Infineon Technologies
3,339 -

RFQ

IRF3808LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB41N15DPBF

IRFIB41N15DPBF

MOSFET N-CH 150V 41A TO220AB FP

Infineon Technologies
3,520 -

RFQ

IRFIB41N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±20V 2520 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1312PBF

IRF1312PBF

MOSFET N-CH 80V 95A TO220AB

Infineon Technologies
3,586 -

RFQ

IRF1312PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 10mOhm @ 57A, 10V 5.5V @ 250µA 140 nC @ 10 V ±20V 5450 pF @ 25 V - 3.8W (Ta), 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2805SPBF

IRF2805SPBF

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies
2,085 -

RFQ

IRF2805SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3808SPBF

IRF3808SPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies
2,321 -

RFQ

IRF3808SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ130N03LSGATMA1

BSZ130N03LSGATMA1

MOSFET N-CH 30V 10A/35A 8TSDSON

Infineon Technologies
3,565 -

RFQ

BSZ130N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 35A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V 2.2V @ 250µA 13 nC @ 10 V ±20V 970 pF @ 15 V - 2.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUZ30N06S5L140ATMA1

IAUZ30N06S5L140ATMA1

MOSFET N-CH 60V 30A TSDSON-8-32

Infineon Technologies
3,212 -

RFQ

IAUZ30N06S5L140ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tj) - 14mOhm @ 15A, 10V 2.2V @ 10µA 12.2 nC @ 10 V ±16V 888 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC090N03LSGATMA1

BSC090N03LSGATMA1

MOSFET N-CH 30V 13A/48A TDSON

Infineon Technologies
2,730 -

RFQ

BSC090N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 48A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM9331TRPBF

IRFHM9331TRPBF

MOSFET P-CH 30V 11A/24A PQFN

Infineon Technologies
3,668 -

RFQ

IRFHM9331TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 24A (Tc) 10V, 20V 10mOhm @ 11A, 20V 2.4V @ 25µA 48 nC @ 10 V ±25V 1543 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFHM3911TRPBF

IRFHM3911TRPBF

MOSFET N-CH 100V 3.2A/20A 8PQFN

Infineon Technologies
3,191 -

RFQ

IRFHM3911TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 3.2A (Ta), 20A (Tc) 10V 115mOhm @ 6.3A, 10V 4V @ 35µA 26 nC @ 10 V ±20V 760 pF @ 50 V - 2.8W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ060NE2LSATMA1

BSZ060NE2LSATMA1

MOSFET N-CH 25V 12A/40A TSDSON

Infineon Technologies
83,750 -

RFQ

BSZ060NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 40A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2V @ 250µA 9.1 nC @ 10 V ±20V 670 pF @ 12 V - 2.1W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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