Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL2703SPBF

IRL2703SPBF

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
3,068 -

RFQ

IRL2703SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34EPBF

IRFZ34EPBF

MOSFET N-CH 60V 28A TO220AB

Infineon Technologies
3,341 -

RFQ

IRFZ34EPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 42mOhm @ 17A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 680 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZSPBF

IRF3711ZSPBF

MOSFET N-CH 20V 92A D2PAK

Infineon Technologies
3,504 -

RFQ

IRF3711ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709PBF

IRF3709PBF

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies
3,094 -

RFQ

IRF3709PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLL024ZTRPBF

IRLL024ZTRPBF

MOSFET N-CH 55V 5A SOT223

Infineon Technologies
2,215 -

RFQ

IRLL024ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 5A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ0704LSATMA1

BSZ0704LSATMA1

MOSFET N-CH 60V 11A/40A TSDSON

Infineon Technologies
2,003 -

RFQ

BSZ0704LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 40A (Tc) 4.5V, 10V 9.9mOhm @ 20A, 10V 2.3V @ 14µA 8.6 nC @ 4.5 V ±20V 1300 pF @ 30 V - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC340N08NS3GATMA1

BSC340N08NS3GATMA1

MOSFET N-CH 80V 7A/23A TDSON-8-5

Infineon Technologies
2,615 -

RFQ

BSC340N08NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 23A (Tc) 6V, 10V 34mOhm @ 12A, 10V 3.5V @ 12µA 9.1 nC @ 10 V ±20V 756 pF @ 40 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3711LPBF

IRF3711LPBF

MOSFET N-CH 20V 110A TO262

Infineon Technologies
3,498 -

RFQ

IRF3711LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48ZPBF

IRFZ48ZPBF

MOSFET N-CH 55V 61A TO220AB

Infineon Technologies
2,976 -

RFQ

IRFZ48ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZCLPBF

IRF3709ZCLPBF

MOSFET N-CH 30V 87A TO262

Infineon Technologies
2,388 -

RFQ

IRF3709ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520NSPBF

IRL520NSPBF

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
3,010 -

RFQ

IRL520NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3302SPBF

IRL3302SPBF

MOSFET N-CH 20V 39A D2PAK

Infineon Technologies
3,889 -

RFQ

IRL3302SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ46ZPBF

IRFZ46ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
2,411 -

RFQ

IRFZ46ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZSPBF

IRF3707ZSPBF

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,391 -

RFQ

IRF3707ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44ZLPBF

IRLZ44ZLPBF

MOSFET N-CH 55V 51A TO262

Infineon Technologies
2,722 -

RFQ

IRLZ44ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXCLFZ24NSTRL

AUXCLFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies
2,436 -

RFQ

AUXCLFZ24NSTRL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530NSPBF

IRF530NSPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,014 -

RFQ

IRF530NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI520NPBF

IRLI520NPBF

MOSFET N-CH 100V 8.1A TO220AB FP

Infineon Technologies
2,763 -

RFQ

IRLI520NPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.1A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711PBF

IRF3711PBF

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
3,773 -

RFQ

IRF3711PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ44ZSPBF

IRLZ44ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,574 -

RFQ

IRLZ44ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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