Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7241TRPBF

IRF7241TRPBF

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies
2,228 -

RFQ

IRF7241TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP295H6327XTSA1

BSP295H6327XTSA1

MOSFET N-CH 60V 1.8A SOT223-4

Infineon Technologies
3,203 -

RFQ

BSP295H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 4.5V, 10V 300mOhm @ 1.8A, 10V 1.8V @ 400µA 17 nC @ 10 V ±20V 368 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPZ40N04S5L2R8ATMA1

IPZ40N04S5L2R8ATMA1

MOSFET N-CH 40V 40A 8TSDSON

Infineon Technologies
2,329 -

RFQ

IPZ40N04S5L2R8ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2V @ 30µA 52 nC @ 10 V ±16V 2800 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC054N04NSGATMA1

BSC054N04NSGATMA1

MOSFET N-CH 40V 17A/81A TDSON

Infineon Technologies
2,887 -

RFQ

BSC054N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta), 81A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 27µA 34 nC @ 10 V ±20V 2800 pF @ 20 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7416TRPBF

IRF7416TRPBF

MOSFET P-CH 30V 10A 8SO

Infineon Technologies
2,037 -

RFQ

IRF7416TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 1V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB41N15DPBF

IRFB41N15DPBF

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies
3,975 -

RFQ

IRFB41N15DPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3502SPBF

IRL3502SPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
2,804 -

RFQ

IRL3502SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4710PBF

IRFS4710PBF

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies
2,096 -

RFQ

IRFS4710PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807ZSPBF

IRF2807ZSPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
2,070 -

RFQ

IRF2807ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
64-2092PBF

64-2092PBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,059 -

RFQ

64-2092PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N20DPBF

IRFB23N20DPBF

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies
2,085 -

RFQ

IRFB23N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404PBF

IRL1404PBF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
2,247 -

RFQ

IRL1404PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404LPBF

IRL1404LPBF

MOSFET N-CH 40V 160A TO262

Infineon Technologies
2,980 -

RFQ

IRL1404LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103SPBF

IRL3103SPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
3,859 -

RFQ

IRL3103SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB31N20DPBF

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

Infineon Technologies
2,846 -

RFQ

IRFB31N20DPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS59N10DPBF

IRFS59N10DPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
2,014 -

RFQ

IRFS59N10DPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF

IRFS31N20DPBF

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies
3,531 -

RFQ

IRFS31N20DPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies
3,613 -

RFQ

IRFB59N10DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1010NPBF

IRFI1010NPBF

MOSFET N-CH 55V 49A TO220AB FP

Infineon Technologies
3,472 -

RFQ

IRFI1010NPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 12mOhm @ 26A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1010NSPBF

IRF1010NSPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,522 -

RFQ

IRF1010NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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