Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
64-4092PBF

64-4092PBF

MOSFET N-CH 55V 28A I-PAK

Infineon Technologies
2,239 -

RFQ

64-4092PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3708PBF

IRFR3708PBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,455 -

RFQ

IRFR3708PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU6215PBF

IRFU6215PBF

MOSFET P-CH 150V 13A IPAK

Infineon Technologies
2,558 -

RFQ

IRFU6215PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU13N20DPBF

IRFU13N20DPBF

MOSFET N-CH 200V 13A IPAK

Infineon Technologies
2,426 -

RFQ

IRFU13N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 10V 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR9N20DPBF

IRFR9N20DPBF

MOSFET N-CH 200V 9.4A DPAK

Infineon Technologies
2,454 -

RFQ

IRFR9N20DPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3303PBF

IRLU3303PBF

MOSFET N-CH 30V 35A I-PAK

Infineon Technologies
2,992 -

RFQ

IRLU3303PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR6215PBF

IRFR6215PBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,597 -

RFQ

IRFR6215PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2307ZPBF

IRFR2307ZPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
3,011 -

RFQ

IRFR2307ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DPBF

IRFR18N15DPBF

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
2,265 -

RFQ

IRFR18N15DPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3410PBF

IRFR3410PBF

MOSFET N-CH 100V 31A DPAK

Infineon Technologies
2,290 -

RFQ

IRFR3410PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905ZPBF

IRLR2905ZPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,656 -

RFQ

IRLR2905ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3710ZPBF

IRFR3710ZPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,411 -

RFQ

IRFR3710ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1010ZPBF

IRFR1010ZPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,087 -

RFQ

IRFR1010ZPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR12N25DPBF

IRFR12N25DPBF

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,203 -

RFQ

IRFR12N25DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3710ZPBF

IRFU3710ZPBF

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
3,752 -

RFQ

IRFU3710ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU1010ZPBF

IRFU1010ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
3,153 -

RFQ

IRFU1010ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3705ZPBF

IRLR3705ZPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,508 -

RFQ

IRLR3705ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU1205PBF

IRFU1205PBF

MOSFET N-CH 55V 44A IPAK

Infineon Technologies
3,081 -

RFQ

IRFU1205PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105PBF

IRFU4105PBF

MOSFET N-CH 55V 27A IPAK

Infineon Technologies
3,882 -

RFQ

IRFU4105PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2905PBF

IRLU2905PBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
2,168 -

RFQ

IRLU2905PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V - 1700 pF @ 25 V - - - Through Hole
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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