Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ48ZLPBF

IRFZ48ZLPBF

MOSFET N-CH 55V 61A TO262

Infineon Technologies
3,231 -

RFQ

IRFZ48ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24EPBF

IRFIZ24EPBF

MOSFET N-CH 60V 14A TO220AB FP

Infineon Technologies
2,029 -

RFQ

IRFIZ24EPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 71mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704LPBF

IRF3704LPBF

MOSFET N-CH 20V 77A TO262

Infineon Technologies
2,454 -

RFQ

IRF3704LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3716PBF

IRL3716PBF

MOSFET N-CH 20V 180A TO220AB

Infineon Technologies
3,558 -

RFQ

IRL3716PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010EZLPBF

IRF1010EZLPBF

MOSFET N-CH 60V 75A TO262

Infineon Technologies
3,238 -

RFQ

IRF1010EZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3402SPBF

IRL3402SPBF

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,516 -

RFQ

IRL3402SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3303LPBF

IRL3303LPBF

MOSFET N-CH 30V 38A TO262

Infineon Technologies
3,229 -

RFQ

IRL3303LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104LPBF

IRF4104LPBF

MOSFET N-CH 40V 75A TO262

Infineon Technologies
2,435 -

RFQ

IRF4104LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL17N20DPBF

IRFSL17N20DPBF

MOSFET N-CH 200V 16A TO262

Infineon Technologies
2,213 -

RFQ

IRFSL17N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N15DPBF

IRFSL23N15DPBF

MOSFET N-CH 150V 23A TO262

Infineon Technologies
3,660 -

RFQ

IRFSL23N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103LPBF

IRL3103LPBF

MOSFET N-CH 30V 64A TO262

Infineon Technologies
3,619 -

RFQ

IRL3103LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004LPBF

IRL1004LPBF

MOSFET N-CH 40V 130A TO262

Infineon Technologies
2,136 -

RFQ

IRL1004LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010NLPBF

IRF1010NLPBF

MOSFET N-CH 55V 85A TO262

Infineon Technologies
3,824 -

RFQ

IRF1010NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103D2PBF

IRL3103D2PBF

MOSFET N-CH 30V 54A TO220AB

Infineon Technologies
2,711 -

RFQ

IRL3103D2PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V 1V @ 250µA 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48NLPBF

IRFZ48NLPBF

MOSFET N-CH 55V 64A TO262

Infineon Technologies
2,081 -

RFQ

IRFZ48NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NLPBF

IRL2203NLPBF

MOSFET N-CH 30V 116A TO262

Infineon Technologies
2,274 -

RFQ

IRL2203NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705NLPBF

IRL3705NLPBF

MOSFET N-CH 55V 89A TO262

Infineon Technologies
3,129 -

RFQ

IRL3705NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB42N20DPBF

IRFB42N20DPBF

MOSFET N-CH 200V 44A TO220AB

Infineon Technologies
2,820 -

RFQ

IRFB42N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUZ40N10S5N130ATMA1

IAUZ40N10S5N130ATMA1

MOSFET N-CH 100V 40A 8TSDSON-33

Infineon Technologies
3,437 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 13mOhm @ 20A, 10V 3.8V @ 27µA 24 nC @ 10 V ±20V 1525 pF @ 50 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC100N06LS3GATMA1

BSC100N06LS3GATMA1

MOSFET N-CH 60V 12A/50A TDSON

Infineon Technologies
3,406 -

RFQ

BSC100N06LS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 50A (Tc) 4.5V, 10V 10mOhm @ 50A, 10V 2.2V @ 23µA 45 nC @ 10 V ±20V 3500 pF @ 30 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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