Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC094N06LS5ATMA1

BSC094N06LS5ATMA1

MOSFET N-CHANNEL 60V 47A 8TDSON

Infineon Technologies
2,062 -

RFQ

BSC094N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 2.3V @ 14µA 9.4 nC @ 4.5 V ±20V 1300 pF @ 30 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC22DN20NS3GATMA1

BSC22DN20NS3GATMA1

MOSFET N-CH 200V 7A TDSON-8-5

Infineon Technologies
2,834 -

RFQ

BSC22DN20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 225mOhm @ 3.5A, 10V 4V @ 13µA 5.6 nC @ 10 V ±20V 430 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC265N10LSFGATMA1

BSC265N10LSFGATMA1

MOSFET N-CH 100V 6.5A/40A TDSON

Infineon Technologies
3,982 -

RFQ

BSC265N10LSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 40A (Tc) 4.5V, 10V 26.5mOhm @ 20A, 10V 2.4V @ 43µA 21 nC @ 10 V ±20V 1600 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBA1405PPBF

IRFBA1405PPBF

MOSFET N-CH 55V 174A SUPER-220

Infineon Technologies
3,118 -

RFQ

IRFBA1405PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 174A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRL3803LPBF

IRL3803LPBF

MOSFET N-CH 30V 140A TO262

Infineon Technologies
3,863 -

RFQ

IRL3803LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3714ZPBF

IRLU3714ZPBF

MOSFET N-CH 20V 37A I-PAK

Infineon Technologies
2,984 -

RFQ

IRLU3714ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 37A (Tc) 4.5V, 10V 15mOhm @ 15A, 10V 2.55V @ 250µA 7.1 nC @ 4.5 V ±20V 560 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3704PBF

IRFU3704PBF

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,332 -

RFQ

IRFU3704PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3714PBF

IRLU3714PBF

MOSFET N-CH 20V 36A I-PAK

Infineon Technologies
3,707 -

RFQ

IRLU3714PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU120ZPBF

IRFU120ZPBF

MOSFET N-CH 100V 8.7A IPAK

Infineon Technologies
2,540 -

RFQ

IRFU120ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU4343PBF

IRLU4343PBF

MOSFET N-CH 55V 26A I-PAK

Infineon Technologies
2,277 -

RFQ

IRLU4343PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU7821PBF

IRLU7821PBF

MOSFET N-CH 30V 65A I-PAK

Infineon Technologies
2,646 -

RFQ

IRLU7821PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3504ZPBF

IRFU3504ZPBF

MOSFET N-CH 40V 42A IPAK

Infineon Technologies
2,399 -

RFQ

IRFU3504ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2905ZPBF

IRFU2905ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
2,059 -

RFQ

IRFU2905ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3711PBF

IRFU3711PBF

MOSFET N-CH 20V 100A IPAK

Infineon Technologies
3,097 -

RFQ

IRFU3711PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU7833PBF

IRLU7833PBF

MOSFET N-CH 30V 140A I-PAK

Infineon Technologies
3,307 -

RFQ

IRLU7833PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU12N25DPBF

IRFU12N25DPBF

MOSFET N-CH 250V 14A IPAK

Infineon Technologies
3,247 -

RFQ

IRFU12N25DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3705ZPBF

IRLU3705ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
2,310 -

RFQ

IRLU3705ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFL4315PBF

IRFL4315PBF

MOSFET N-CH 150V 2.6A SOT223

Infineon Technologies
3,812 -

RFQ

IRFL4315PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Ta) 10V 185mOhm @ 1.6A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 420 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF5803D2PBF

IRF5803D2PBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies
2,130 -

RFQ

IRF5803D2PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7326D2PBF

IRF7326D2PBF

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
3,213 -

RFQ

IRF7326D2PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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