Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75339S3ST

HUF75339S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
650 -

RFQ

HUF75339S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75344P3

HUFA75344P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
1,270 -

RFQ

HUFA75344P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF380N60-F152

FCPF380N60-F152

600V, N-CHANNEL, MOSFET, TO-220

Fairchild Semiconductor
476 -

RFQ

FCPF380N60-F152

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP120AN15A0

FDP120AN15A0

MOSFET N-CH 150V 2.8A/14A TO220

Fairchild Semiconductor
9,998 -

RFQ

FDP120AN15A0

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 2.8A (Ta), 14A (Tc) 6V, 10V 120mOhm @ 4A, 10V 4V @ 250µA 14.5 nC @ 10 V ±20V 770 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76132S3ST

HUF76132S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,600 -

RFQ

HUF76132S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 11mOhm @ 75A, 10V 3V @ 250µA 52 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDB8870-F085

FDB8870-F085

MOSFET N-CH 30V 23A/160A D2PAK

Fairchild Semiconductor
5,600 -

RFQ

FDB8870-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) - 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD044AN03L

FDD044AN03L

MOSFET N-CH 30V 21A/35A TO252AA

Fairchild Semiconductor
4,060 -

RFQ

FDD044AN03L

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76132S3S

HUF76132S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,000 -

RFQ

HUF76132S3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 11mOhm @ 75A, 10V 3V @ 250µA 52 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQAF17P10

FQAF17P10

MOSFET P-CH 100V 12.4A TO3PF

Fairchild Semiconductor
2,972 -

RFQ

FQAF17P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12.4A (Tc) 10V 190mOhm @ 6.2A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU044AN03L

FDU044AN03L

MOSFET N-CH 30V 21A/35A IPAK

Fairchild Semiconductor
2,806 -

RFQ

FDU044AN03L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI32N20CTU

FQI32N20CTU

MOSFET N-CH 200V 28A I2PAK

Fairchild Semiconductor
1,832 -

RFQ

FQI32N20CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 3.13W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75333G3

HUFA75333G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,512 -

RFQ

HUFA75333G3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP6676S

FDP6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,485 -

RFQ

FDP6676S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 76A (Ta) 4.5V, 10V 6.5mOhm @ 38A, 10V 3V @ 1mA 56 nC @ 5 V ±16V 4853 pF @ 15 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI9N50TU

FQI9N50TU

MOSFET N-CH 500V 9A I2PAK

Fairchild Semiconductor
756 -

RFQ

FQI9N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75842S3S

HUFA75842S3S

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor
542 -

RFQ

HUFA75842S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB9N50TM

FQB9N50TM

MOSFET N-CH 500V 9A D2PAK

Fairchild Semiconductor
485 -

RFQ

FQB9N50TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD16N05

RFD16N05

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,936 -

RFQ

RFD16N05

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76432S3ST

HUF76432S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,124 -

RFQ

HUF76432S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120ATU

IRFU120ATU

MOSFET N-CH 100V 8.4A IPAK

Fairchild Semiconductor
2,580 -

RFQ

IRFU120ATU

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.4A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 22 nC @ 10 V - 480 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6689S

FDS6689S

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor
1,941 -

RFQ

FDS6689S

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.4mOhm @ 16A, 10V 3V @ 1mA 78 nC @ 10 V ±20V 3290 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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