Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

Fairchild Semiconductor
3,682 -

RFQ

FQPF3N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 5V @ 250µA 19 nC @ 10 V ±30V 690 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI13N06LTU

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

Fairchild Semiconductor
2,955 -

RFQ

FQI13N06LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1K49156

RF1K49156

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,660 -

RFQ

RF1K49156

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS240B

IRFS240B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,420 -

RFQ

IRFS240B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF33N10

FQAF33N10

MOSFET N-CH 100V 25.8A TO3PF

Fairchild Semiconductor
1,396 -

RFQ

FQAF33N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25.8A (Tc) 10V 52mOhm @ 12.9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6512A

FDU6512A

MOSFET N-CH 20V 10.7A/36A IPAK

Fairchild Semiconductor
1,151 -

RFQ

FDU6512A

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V 1.5V @ 250µA 19 nC @ 4.5 V ±12V 1082 pF @ 10 V - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD6N60CTM

FQD6N60CTM

MOSFET N-CH 600V 4A DPAK

Fairchild Semiconductor
869 -

RFQ

FQD6N60CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFP9640L

SFP9640L

MOSFET P-CH 200V 11A TO220-3

Fairchild Semiconductor
760 -

RFQ

SFP9640L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 5V 500mOhm @ 5.5A, 5V 2V @ 250µA 59 nC @ 5 V ±20V 1585 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75343P3

HUFA75343P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
643 -

RFQ

HUFA75343P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP45N06

RFP45N06

MOSFET N-CH 60V 45A TO220-3

Fairchild Semiconductor
2,045 -

RFQ

RFP45N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD2512

FDD2512

MOSFET N-CH 150V 6.7A TO252

Fairchild Semiconductor
9,940 -

RFQ

FDD2512

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 6.7A (Ta) 6V, 10V 420mOhm @ 2.2A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 344 pF @ 75 V - 42W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDB4020P

FDB4020P

MOSFET P-CH 20V 16A TO263AB

Fairchild Semiconductor
7,121 -

RFQ

FDB4020P

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.5V, 4.5V 80mOhm @ 8A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 665 pF @ 10 V - 37.5W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FDP6035L

FDP6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,250 -

RFQ

FDP6035L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Through Hole
ISL9N308AP3

ISL9N308AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,200 -

RFQ

ISL9N308AP3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N308AS3ST

ISL9N308AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,400 -

RFQ

ISL9N308AS3ST

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI2P25TU

FQI2P25TU

MOSFET P-CH 250V 2.3A I2PAK

Fairchild Semiconductor
1,000 -

RFQ

FQI2P25TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI3P20TU

FQI3P20TU

MOSFET P-CH 200V 2.8A I2PAK

Fairchild Semiconductor
1,000 -

RFQ

FQI3P20TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB16N25CTM

FQB16N25CTM

MOSFET N-CH 250V 15.6A D2PAK

Fairchild Semiconductor
845 -

RFQ

FQB16N25CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU8874

FDU8874

MOSFET N-CH 30V 18A/116A IPAK

Fairchild Semiconductor
5,400 -

RFQ

FDU8874

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1K4915696

RF1K4915696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,500 -

RFQ

RF1K4915696

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 1812 Record«Prev1... 1213141516171819...91Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário