Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF6N40CF

FQPF6N40CF

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor
1,300 -

RFQ

FQPF6N40CF

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

Fairchild Semiconductor
1,244 -

RFQ

FQP32N12V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU8580

FDU8580

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor
7,200 -

RFQ

FDU8580

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor
1,472 -

RFQ

HUFA75637P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor
9,850 -

RFQ

FQD630TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor
8,203 -

RFQ

FDD068AN03L

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor
5,268 -

RFQ

FDMB506P

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2960 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

Fairchild Semiconductor
3,222 -

RFQ

FQB9N25CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

Fairchild Semiconductor
2,514 -

RFQ

FDU068AN03L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75329D3

HUF75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor
1,792 -

RFQ

HUF75329D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI6N50TU

FQI6N50TU

MOSFET N-CH 500V 5.5A I2PAK

Fairchild Semiconductor
1,650 -

RFQ

FQI6N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N60CTM

FQB3N60CTM

MOSFET N-CH 600V 3A D2PAK

Fairchild Semiconductor
1,376 -

RFQ

FQB3N60CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 3.4Ohm @ 1.5A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 565 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

Fairchild Semiconductor
1,147 -

RFQ

FQP44N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 44A (Tc) 10V 34mOhm @ 22A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76639P3

HUFA76639P3

MOSFET N-CH 100V 51A TO220-3

Fairchild Semiconductor
973 -

RFQ

HUFA76639P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI15P12TU

FQI15P12TU

MOSFET P-CH 120V 15A I2PAK

Fairchild Semiconductor
901 -

RFQ

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFP9530

SFP9530

MOSFET P-CH 100V 10.5A TO220-3

Fairchild Semiconductor
762 -

RFQ

SFP9530

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) - 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD6690S

FDD6690S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,500 -

RFQ

FDD6690S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 10V 16mOhm @ 10A, 10V 3V @ 1mA 24 nC @ 10 V ±20V 2010 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

Fairchild Semiconductor
2,000 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU5N60TU

FCU5N60TU

4.6A, 600V, 0.95OHM, N-CHANNEL

Fairchild Semiconductor
1,688 -

RFQ

FCU5N60TU

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ)
FQU8N25TU

FQU8N25TU

MOSFET N-CH 250V 6.2A IPAK

Fairchild Semiconductor
5,629 -

RFQ

FQU8N25TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 530 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 1812 Record«Prev1... 910111213141516...91Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário