Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP17N08L

FQP17N08L

MOSFET N-CH 80V 16.5A TO220-3

Fairchild Semiconductor
2,957 -

RFQ

FQP17N08L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFR9024TF

SFR9024TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,750 -

RFQ

SFR9024TF

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW840BTM

IRFW840BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,800 -

RFQ

IRFW840BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF4N50

FQPF4N50

MOSFET N-CH 500V 2.3A TO220F

Fairchild Semiconductor
1,000 -

RFQ

FQPF4N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 2.7Ohm @ 1.15A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI9424DY

SI9424DY

MOSFET P-CH 20V 8A 8SOIC

Fairchild Semiconductor
744 -

RFQ

SI9424DY

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 33 nC @ 5 V ±10V 2260 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS634B_FP001

IRFS634B_FP001

MOSFET N-CH 250V 8.1A TO220F

Fairchild Semiconductor
6,000 -

RFQ

IRFS634B_FP001

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76121S3ST

HUF76121S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,000 -

RFQ

HUF76121S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
HUF76413D3

HUF76413D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

HUF76413D3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU4N25TU

FQU4N25TU

MOSFET N-CH 250V 3A IPAK

Fairchild Semiconductor
3,247 -

RFQ

FQU4N25TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Tc) 10V 1.75Ohm @ 1.5A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS640A

IRFS640A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,576 -

RFQ

IRFS640A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 10V 180mOhm @ 4.9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N60

FQPF3N60

MOSFET N-CH 600V 2A TO220F

Fairchild Semiconductor
2,360 -

RFQ

FQPF3N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 3.6Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76139S3ST

HUF76139S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,950 -

RFQ

HUF76139S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 2700 pF @ 25 V - 165W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQB5N40TM

FQB5N40TM

MOSFET N-CH 400V 4.5A D2PAK

Fairchild Semiconductor
1,425 -

RFQ

FQB5N40TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1.6Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI3N30TU

FQI3N30TU

MOSFET N-CH 300V 3.2A I2PAK

Fairchild Semiconductor
1,146 -

RFQ

FQI3N30TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76409D3

HUF76409D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

HUF76409D3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76432S3ST

HUFA76432S3ST

MOSFET N-CH 60V 59A D2PAK

Fairchild Semiconductor
2,993 -

RFQ

HUFA76432S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFS9640

SFS9640

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
1,236 -

RFQ

SFS9640

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 59 nC @ 10 V ±30V 1585 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1K49157

RF1K49157

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
960 -

RFQ

RF1K49157

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 30mOhm @ 6.3A, 10V 3V @ 250µA 88 nC @ 20 V ±20V 1575 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFD16N05NL

RFD16N05NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
776 -

RFQ

RFD16N05NL

Ficha técnica

Bulk PSPICE® Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB8876

FDB8876

MOSFET N-CH 30V 71A TO263AB

Fairchild Semiconductor
7,486 -

RFQ

FDB8876

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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