Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSP2N60A

SSP2N60A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,000 -

RFQ

SSP2N60A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 410 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N306AD3ST

ISL9N306AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,371 -

RFQ

ISL9N306AD3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQP630

FQP630

MOSFET N-CH 200V 9A TO220-3

Fairchild Semiconductor
5,961 -

RFQ

FQP630

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5P10

FQPF5P10

MOSFET P-CH 100V 2.9A TO220F

Fairchild Semiconductor
4,443 -

RFQ

FQPF5P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 2.9A (Tc) 10V 1.05Ohm @ 1.45A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF5N20L

FQPF5N20L

MOSFET N-CH 200V 3.5A TO220F

Fairchild Semiconductor
3,834 -

RFQ

FQPF5N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 5V, 10V 1.2Ohm @ 1.75A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF17N08

FQPF17N08

MOSFET N-CH 80V 11.2A TO220F

Fairchild Semiconductor
2,970 -

RFQ

FQPF17N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 11.2A (Tc) 10V 115mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFS9Z34

SFS9Z34

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,772 -

RFQ

SFS9Z34

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 140mOhm @ 6A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1155 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFW640BTM

IRFW640BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,753 -

RFQ

IRFW640BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 3.13W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF2N50

FQPF2N50

MOSFET N-CH 500V 1.3A TO220F

Fairchild Semiconductor
1,628 -

RFQ

FQPF2N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.3A (Tc) 10V 5.3Ohm @ 650mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD2N50TF

FQD2N50TF

MOSFET N-CH 500V 1.6A DPAK

Fairchild Semiconductor
1,015 -

RFQ

FQD2N50TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75307T3ST

HUF75307T3ST

MOSFET N-CH 55V 2.6A SOT223-4

Fairchild Semiconductor
5,276 -

RFQ

HUF75307T3ST

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.6A (Ta) 10V 90mOhm @ 2.6A, 10V 4V @ 250µA 17 nC @ 20 V ±20V 250 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSR2N60B

SSR2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

SSR2N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA76629D3S

HUFA76629D3S

MOSFET N-CH 100V 20A TO252AA

Fairchild Semiconductor
4,600 -

RFQ

HUFA76629D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFS9Z24

SFS9Z24

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,485 -

RFQ

SFS9Z24

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.5A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N310AP3

ISL9N310AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,211 -

RFQ

ISL9N310AP3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 10Ohm @ 62A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Through Hole
SSI7N60BTU

SSI7N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
964 -

RFQ

SSI7N60BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU130ATU

IRFU130ATU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,698 -

RFQ

IRFU130ATU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 110mOhm @ 6.5A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8750

FDD8750

MOSFET N-CH 25V 6.5A/2.7A DPAK

Fairchild Semiconductor
8,245 -

RFQ

FDD8750

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 6.5A (Ta), 2.7A (Tc) 4.5V, 10V 40mOhm @ 2.7A, 10V 2.5V @ 250µA 9 nC @ 10 V ±20V 425 pF @ 13 V - 3.7W (Ta), 18W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD5N30TF

FQD5N30TF

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor
6,905 -

RFQ

FQD5N30TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI11P06TU

FQI11P06TU

MOSFET P-CH 60V 11.4A I2PAK

Fairchild Semiconductor
5,955 -

RFQ

FQI11P06TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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