Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB3P20TM

FQB3P20TM

MOSFET P-CH 200V 2.8A D2PAK

Fairchild Semiconductor
3,877 -

RFQ

FQB3P20TM

Ficha técnica

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISL9N310AD3

ISL9N310AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,028 -

RFQ

ISL9N310AD3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQI5P10TU

FQI5P10TU

MOSFET P-CH 100V 4.5A I2PAK

Fairchild Semiconductor
3,000 -

RFQ

FQI5P10TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2P25

FQPF2P25

MOSFET P-CH 250V 1.8A TO220F

Fairchild Semiconductor
2,391 -

RFQ

FQPF2P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 1.8A (Tc) 10V 4Ohm @ 900mA, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP19N10L

FQP19N10L

MOSFET N-CH 100V 19A TO220-3

Fairchild Semiconductor
2,071 -

RFQ

FQP19N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI17N08LTU

FQI17N08LTU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor
2,000 -

RFQ

FQI17N08LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N30TM

FQD5N30TM

MOSFET N-CH 300V 4.4A DPAK

Fairchild Semiconductor
1,623 -

RFQ

FQD5N30TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB20N06TM

FQB20N06TM

MOSFET N-CH 60V 20A D2PAK

Fairchild Semiconductor
1,550 -

RFQ

FQB20N06TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 3.75W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB3N40TM

FQB3N40TM

MOSFET N-CH 400V 2.5A D2PAK

Fairchild Semiconductor
1,490 -

RFQ

FQB3N40TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3N50C

FQP3N50C

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,362 -

RFQ

FQP3N50C

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI10N20CTU

FQI10N20CTU

MOSFET N-CH 200V 9.5A I2PAK

Fairchild Semiconductor
1,055 -

RFQ

FQI10N20CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8P10

FQPF8P10

MOSFET P-CH 100V 5.3A TO220F

Fairchild Semiconductor
860 -

RFQ

FQPF8P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.3A (Tc) 10V 530mOhm @ 2.65A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76107P3

HUF76107P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,400 -

RFQ

HUF76107P3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±16V 315 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4822DY

SI4822DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
7,709 -

RFQ

SI4822DY

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9.5mOhm @ 12.5A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2180 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISL9N318AD3ST

ISL9N318AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,500 -

RFQ

ISL9N318AD3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDD5N53TM

FDD5N53TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,970 -

RFQ

FDD5N53TM

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 530 V 4A (Tc) 10V 1.5Ohm @ 2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75321D3S

HUF75321D3S

MOSFET N-CH 55V 20A TO252AA

Fairchild Semiconductor
1,818 -

RFQ

HUF75321D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFW620BTM

IRFW620BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,600 -

RFQ

IRFW620BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 3.13W (Ta), 47W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFW9Z24TM

SFW9Z24TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,600 -

RFQ

SFW9Z24TM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75321S3S

HUF75321S3S

MOSFET N-CH 55V 35A D2PAK

Fairchild Semiconductor
1,204 -

RFQ

HUF75321S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) - 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 1812 Record«Prev12345678910...91Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário