Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76107D3S

HUF76107D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,050 -

RFQ

HUF76107D3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±20V 315 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW630BTM_FP001

IRFW630BTM_FP001

9A, 200V, 0.4OHM, N-CHANNEL

Fairchild Semiconductor
800 -

RFQ

IRFW630BTM_FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 720 pF @ 25 V - 3.13W (Ta), 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW520ATM

IRFW520ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
774 -

RFQ

IRFW520ATM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76423D3S

HUF76423D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor
8,936 -

RFQ

HUF76423D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI2N30TU

FQI2N30TU

MOSFET N-CH 300V 2.1A I2PAK

Fairchild Semiconductor
7,063 -

RFQ

FQI2N30TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 2.1A (Tc) 10V 3.7Ohm @ 1.05A, 10V 5V @ 250µA 5 nC @ 10 V ±30V 130 pF @ 25 V - 3.13W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76423D3

HUF76423D3

MOSFET N-CH 60V 20A IPAK

Fairchild Semiconductor
6,794 -

RFQ

HUF76423D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI5N15TU

FQI5N15TU

MOSFET N-CH 150V 5.4A I2PAK

Fairchild Semiconductor
5,717 -

RFQ

FQI5N15TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5.4A (Tc) 10V 800mOhm @ 2.7A, 10V 4V @ 250µA 7 nC @ 10 V ±25V 230 pF @ 25 V - 3.75W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75329S3ST

HUFA75329S3ST

MOSFET N-CH 55V 49A D2PAK

Fairchild Semiconductor
5,196 -

RFQ

HUFA75329S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP2N50

FQP2N50

MOSFET N-CH 500V 2.1A TO220-3

Fairchild Semiconductor
3,015 -

RFQ

FQP2N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 5.3Ohm @ 1.05A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N30TM

FQB3N30TM

MOSFET N-CH 300V 3.2A D2PAK

Fairchild Semiconductor
2,934 -

RFQ

FQB3N30TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP5N30

FQP5N30

MOSFET N-CH 300V 5.4A TO220-3

Fairchild Semiconductor
2,635 -

RFQ

FQP5N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD4N50TF

FQD4N50TF

MOSFET N-CH 500V 2.6A DPAK

Fairchild Semiconductor
2,258 -

RFQ

FQD4N50TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI7P06TU

FQI7P06TU

MOSFET P-CH 60V 7A I2PAK

Fairchild Semiconductor
2,199 -

RFQ

FQI7P06TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF10N20

FQPF10N20

MOSFET N-CH 200V 6.8A TO220F

Fairchild Semiconductor
1,616 -

RFQ

FQPF10N20

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Tc) 10V 360mOhm @ 3.4A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 670 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N40

FQPF3N40

MOSFET N-CH 400V 1.6A TO220F

Fairchild Semiconductor
1,544 -

RFQ

FQPF3N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.6A (Tc) 10V 3.4Ohm @ 800mA, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8880_NL

FDD8880_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
777 -

RFQ

FDD8880_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS530A

IRFS530A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,315 -

RFQ

IRFS530A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 10.7A (Tc) 10V 110mOhm @ 5.35A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI6463DQ

SI6463DQ

P-CHANNEL MOSFET

Fairchild Semiconductor
4,850 -

RFQ

SI6463DQ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8.8A (Ta) 2.5V, 4.5V 12.5mOhm @ 8.8A, 4.5V 1.5V @ 250µA 66 nC @ 4.5 V ±12V 5045 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSW2N60BTM

SSW2N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,632 -

RFQ

SSW2N60BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 3.13W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU10N20LTU

FQU10N20LTU

MOSFET N-CH 200V 7.6A IPAK

Fairchild Semiconductor
3,190 -

RFQ

FQU10N20LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7.6A (Tc) 5V, 10V 360mOhm @ 3.8A, 10V 2V @ 250µA 17 nC @ 5 V ±20V 830 pF @ 25 V - 2.5W (Ta), 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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