Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR210ATM

IRLR210ATM

MOSFET N-CH 200V 2.7A DPAK

Fairchild Semiconductor
7,500 -

RFQ

IRLR210ATM

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.7A (Tc) 5V 1.5Ohm @ 1.35A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 2.5W (Ta), 21W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75637P3

HUF75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor
5,595 -

RFQ

HUF75637P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N327AD3ST

ISL9N327AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

ISL9N327AD3ST

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 910 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NDS9400

NDS9400

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

NDS9400

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) - 2.5A - - - - - - - 2W - Surface Mount
HUF76009P3

HUF76009P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,513 -

RFQ

HUF76009P3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 470 pF @ 20 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6296

FDU6296

MOSFET N-CH 30V 15A/50A IPAK

Fairchild Semiconductor
7,413 -

RFQ

FDU6296

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

Fairchild Semiconductor
3,256 -

RFQ

FQD3N60TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU3N40TU

FQU3N40TU

MOSFET N-CH 400V 2A IPAK

Fairchild Semiconductor
2,877 -

RFQ

FQU3N40TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI5N30TU

FQI5N30TU

MOSFET N-CH 300V 5.4A I2PAK

Fairchild Semiconductor
2,849 -

RFQ

FQI5N30TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N50

FQPF5N50

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor
1,999 -

RFQ

FQPF5N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD16N15TM

FQD16N15TM

MOSFET N-CH 150V 11.8A DPAK

Fairchild Semiconductor
1,947 -

RFQ

FQD16N15TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 11.8A (Tc) 10V 160mOhm @ 5.9A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP2NA90

FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

Fairchild Semiconductor
1,789 -

RFQ

FQP2NA90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.8A (Tc) 10V 5.8Ohm @ 1.4A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor
1,761 -

RFQ

FDP5N50

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF12N35

FDPF12N35

MOSFET N-CH 350V 12A TO220F

Fairchild Semiconductor
1,458 -

RFQ

FDPF12N35

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 380mOhm @ 6A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1110 pF @ 25 V - 31.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N10L

FQPF19N10L

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor
1,448 -

RFQ

FQPF19N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 5V, 10V 100mOhm @ 6.8A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF6N40CT

FQPF6N40CT

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor
680 -

RFQ

FQPF6N40CT

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830B

IRF830B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,803 -

RFQ

IRF830B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1050 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS8874

FDS8874

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor
4,011 -

RFQ

FDS8874

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.5mOhm @ 16A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3990 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD60N03LTM

FQD60N03LTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
10,000 -

RFQ

FQD60N03LTM

Ficha técnica

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 5V, 10V 23mOhm @ 30A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 900 pF @ 15 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB20AN06A0

FDB20AN06A0

MOSFET N-CH 60V 9A/45A TO263AB

Fairchild Semiconductor
5,810 -

RFQ

FDB20AN06A0

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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