Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDB6670AS

FDB6670AS

MOSFET N-CH 30V 62A TO263AB

Fairchild Semiconductor
5,998 -

RFQ

FDB6670AS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Ta) 4.5V, 10V 8.5mOhm @ 31A, 10V 3V @ 1mA 39 nC @ 15 V ±20V 1570 pF @ 15 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP11N50CF

FQP11N50CF

MOSFET N-CH 500V 11A TO220-3

Fairchild Semiconductor
2,116 -

RFQ

FQP11N50CF

Ficha técnica

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75345P3_NL

HUF75345P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
252 -

RFQ

HUF75345P3_NL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N302AS3

ISL9N302AS3

MOSFET N-CH 30V 75A TO-262AA

Fairchild Semiconductor
400 -

RFQ

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.3mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) - Through Hole
FDP5500-F085

FDP5500-F085

MOSFET N-CH 55V 80A TO220-3

Fairchild Semiconductor
175 -

RFQ

FDP5500-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) - 7mOhm @ 80A, 10V 4V @ 250µA 269 nC @ 20 V ±20V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS3170N7

FDS3170N7

MOSFET N-CH 100V 6.7A 8SO

Fairchild Semiconductor
179 -

RFQ

FDS3170N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.7A (Ta) 6V, 10V 26mOhm @ 6.7A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2714 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF76645S3ST

HUF76645S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
788 -

RFQ

HUF76645S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V 3V @ 250µA 153 nC @ 10 V ±16V 4400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS750A

IRFS750A

MOSFET N-CH 400V 8.4A TO220F

Fairchild Semiconductor
269 -

RFQ

IRFS750A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 8.4A (Tc) 10V 300mOhm @ 4.2A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS350A

IRFS350A

MOSFET N-CH 400V 11.5A TO3PF

Fairchild Semiconductor
188 -

RFQ

IRFS350A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.5A (Tc) 10V 300mOhm @ 5.75A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75939S3ST

HUF75939S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

HUF75939S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 200 V 22A (Tc) 10V 125mOhm @ 22A, 10V 4V @ 250µA 152 nC @ 20 V ±20V 2200 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQAF70N15

FQAF70N15

MOSFET N-CH 150V 44A TO3PF

Fairchild Semiconductor
925 -

RFQ

FQAF70N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 28mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±25V 5400 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF90N10V2

FQPF90N10V2

MOSFET N-CH 100V 90A TO220F

Fairchild Semiconductor
809 -

RFQ

FQPF90N10V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 10mOhm @ 45A, 10V 4V @ 250µA 191 nC @ 10 V ±30V 6150 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF90N08

FQAF90N08

MOSFET N-CH 80V 56A TO3PF

Fairchild Semiconductor
340 -

RFQ

FQAF90N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 56A (Tc) 10V 16mOhm @ 28A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
NDP7050L

NDP7050L

MOSFET N-CH 50V 75A TO220-3

Fairchild Semiconductor
252 -

RFQ

NDP7050L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V ±20V 4000 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQAF19N60

FQAF19N60

MOSFET N-CH 600V 11.2A TO3PF

Fairchild Semiconductor
681 -

RFQ

FQAF19N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11.2A (Tc) 10V 380mOhm @ 5.6A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDAF59N30

FDAF59N30

MOSFET N-CH 300V 34A TO3PF

Fairchild Semiconductor
178 -

RFQ

FDAF59N30

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 34A (Tc) 10V 56mOhm @ 17A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4670 pF @ 25 V - 161W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDI047AN08A0

FDI047AN08A0

MOSFET N-CH 75V 80A I2PAK

Fairchild Semiconductor
787 -

RFQ

FDI047AN08A0

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF15N70

FQAF15N70

MOSFET N-CH 700V 9.5A TO3PF

Fairchild Semiconductor
295 -

RFQ

FQAF15N70

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 9.5A (Tc) 10V 560mOhm @ 4.8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA16N25C

FQA16N25C

MOSFET N-CH 250V 17.8A TO3P

Fairchild Semiconductor
363 -

RFQ

FQA16N25C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 17.8A (Tc) 10V 270mOhm @ 8.9A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH20N60

FCH20N60

MOSFET N-CH 600V 20A TO247-3

Fairchild Semiconductor
838 -

RFQ

FCH20N60

Ficha técnica

Tube SuperFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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