Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP5645

FDP5645

MOSFET N-CH 60V 80A TO220-3

Fairchild Semiconductor
317 -

RFQ

FDP5645

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 9.5mOhm @ 40A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 4468 pF @ 30 V - 125W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQA18N50V2

FQA18N50V2

MOSFET N-CH 500V 20A TO3P

Fairchild Semiconductor
380 -

RFQ

FQA18N50V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 265mOhm @ 10A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75852G3-F085

HUFA75852G3-F085

N-CHANNEL, MOSFET

Fairchild Semiconductor
166 -

RFQ

HUFA75852G3-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQH90N10V2

FQH90N10V2

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
370 -

RFQ

FQH90N10V2

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 105A (Tc) 10V 10mOhm @ 52.5A, 10V 4V @ 250µA 191 nC @ 10 V ±30V 6150 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB6035L

FDB6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

FDB6035L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FDI038AN06A0_NL

FDI038AN06A0_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
169 -

RFQ

FDI038AN06A0_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDA62N28

FDA62N28

MOSFET N-CH 280V 62A TO3PN

Fairchild Semiconductor
514 -

RFQ

FDA62N28

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 280 V 62A (Tc) 10V 51mOhm @ 31A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4630 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75645S3ST_NL

HUF75645S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
342 -

RFQ

HUF75645S3ST_NL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75645S3ST_Q

HUF75645S3ST_Q

N CHANNEL ULTRAFET 100V, 75A, 1

Fairchild Semiconductor
308 -

RFQ

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP18N50V2

FQP18N50V2

MOSFET N-CH 500V 18A TO220-3

Fairchild Semiconductor
590 -

RFQ

FQP18N50V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA35N40

FQA35N40

MOSFET N-CH 400V 35A TO3P

Fairchild Semiconductor
597 -

RFQ

FQA35N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA15N70

FQA15N70

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
379 -

RFQ

FQA15N70

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 15A (Tc) 10V 560mOhm @ 7.5A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3630 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQH35N40

FQH35N40

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
846 -

RFQ

FQH35N40

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQL50N40

FQL50N40

MOSFET N-CH 400V 50A TO264-3

Fairchild Semiconductor
338 -

RFQ

FQL50N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 50A (Tc) 10V 75mOhm @ 25A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 7500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH50N50

FDH50N50

MOSFET N-CH 500V 48A TO247-3

Fairchild Semiconductor
761 -

RFQ

FDH50N50

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±30V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDZ451PZ

FDZ451PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
9,571 -

RFQ

FDZ451PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 140mOhm @ 2A, 4.5V 1.2V @ 250µA 8.8 nC @ 4.5 V ±8V 555 pF @ 10 V - 400mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SCH1331-TL-W

SCH1331-TL-W

POWER MOSFET

Fairchild Semiconductor
10,000 -

RFQ

SCH1331-TL-W

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.5V, 4.5V 84mOhm @ 1.5A, 4.5V 1.3V @ 1mA 5.6 nC @ 4.5 V ±10V 405 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
FDMS0343S

FDMS0343S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
4,477 -

RFQ

FDMS0343S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 49A (Tc) 4.5V, 10V 1.95mOhm @ 28A, 10V 3V @ 1mA 69 nC @ 10 V ±20V 4515 pF @ 13 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ646-TL-E

2SJ646-TL-E

2SJ646 - P-CHANNEL SILICON MOSFE

Fairchild Semiconductor
2,600 -

RFQ

2SJ646-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS0312S

FDMS0312S

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,814 -

RFQ

FDMS0312S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4.9mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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