Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRGB15B60KDPBF-INF

IRGB15B60KDPBF-INF

IGBT, 31A I(C), 600V V(BR)CES, N

Infineon Technologies
3,359 -

RFQ

IRGB15B60KDPBF-INF

Ficha técnica

Bulk - Active NPT 600 V 31 A 62 A 2.2V @ 15V, 15A 208 W 220µJ (on), 340µJ (off) Standard 84 nC 34ns/184ns 400V, 15A, 22Ohm, 15V 92 ns -55°C ~ 150°C (TJ) Through Hole
RJP3065DPP-90#T2F

RJP3065DPP-90#T2F

HIGH SPEED IGBT, 300V, 40A

Renesas Electronics America Inc
2,032 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRG4BC40W-SPBF

IRG4BC40W-SPBF

IRG4BC40W - 600V WARP 60-150 KHZ

International Rectifier
2,084 -

RFQ

IRG4BC40W-SPBF

Ficha técnica

Bulk - Active - 600 V 40 A 160 A 2.5V @ 15V, 20A 160 W 110µJ (on), 230µJ (off) Standard 98 nC 27ns/100ns 480V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IRG7PH28UD1PBF

IRG7PH28UD1PBF

INSULATED GATE BIPOLAR GATE TRAS

International Rectifier
2,325 -

RFQ

IRG7PH28UD1PBF

Ficha técnica

Bulk - Active Trench 1200 V 30 A 100 A 2.3V @ 15V, 15A 115 W 543µJ (off) Standard 90 nC -/229ns 600V, 15A, 22Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RJP3034DPP-B1#T2F

RJP3034DPP-B1#T2F

HIGH SPEED IGBT

Renesas Electronics America Inc
3,371 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJH60T3DPK-M0#T2

RJH60T3DPK-M0#T2

IGBT

Renesas Electronics America Inc
3,881 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGA20S120M

FGA20S120M

IGBT, 40A, 1200V, N-CHANNEL

Fairchild Semiconductor
3,292 -

RFQ

FGA20S120M

Ficha técnica

Bulk - Active Trench Field Stop 1200 V 40 A 60 A 1.85V @ 15V, 20A 348 W - Standard 208 nC - - - -55°C ~ 175°C (TJ) Through Hole
SGH20N60RUFDTU-FS

SGH20N60RUFDTU-FS

IGBT, 32A, 600V, N-CHANNEL

Fairchild Semiconductor
2,816 -

RFQ

SGH20N60RUFDTU-FS

Ficha técnica

Bulk - Active - 600 V 32 A 60 A 2.8V @ 15V, 20A 195 W 524µJ (on), 473µJ (off) Standard 80 nC 30ns/48ns 300V, 20A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
IRG4PC50KPBF

IRG4PC50KPBF

SHORT CIRCUIT RATED ULTRAFAST IG

International Rectifier
2,205 -

RFQ

IRG4PC50KPBF

Ficha técnica

Bulk - Active - 600 V 52 A 104 A 2.2V @ 15V, 30A 200 W 490µJ (on), 680µJ (off) Standard 200 nC 38ns/160ns 480V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4PC60UPBF

IRG4PC60UPBF

IRG4PC60 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,579 -

RFQ

IRG4PC60UPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG8P40N120KD-EPBF

IRG8P40N120KD-EPBF

IRG8P40N120 - DISCRETE IGBT WITH

International Rectifier
2,276 -

RFQ

IRG8P40N120KD-EPBF

Ficha técnica

Bulk - Obsolete - 1200 V 60 A 75 A 2V @ 15V, 25A 305 W 1.6mJ (on), 1.8mJ (off) Standard 240 nC 40ns/245ns 600V, 25A, 10Ohm, 15V 80 ns -40°C ~ 150°C (TJ) Through Hole
IRG7PH46U-EP

IRG7PH46U-EP

IRG7PH46 - DISCRETE IGBT WITHOUT

International Rectifier
3,646 -

RFQ

IRG7PH46U-EP

Ficha técnica

Bulk - Obsolete Trench 1200 V 130 A 160 A 2V @ 15V, 40A 469 W 2.56mJ (on), 1.78mJ (off) Standard 220 nC 45ns/410ns 600V, 40A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
RJH1CV7DPQ-E0#T2

RJH1CV7DPQ-E0#T2

RJH1CV7DPQ - IGBT 1200V 70A

Renesas Electronics America Inc
913 -

RFQ

RJH1CV7DPQ-E0#T2

Ficha técnica

Bulk - Obsolete Trench 1200 V 70 A - 2.3V @ 15V, 35A 320 W 3.2mJ (on), 2.5mJ (off) Standard 166 nC 53ns/185ns 600V, 35A, 5Ohm, 15V 200 ns 150°C (TJ) Through Hole
HGT1S7N60C3DS9A

HGT1S7N60C3DS9A

14A, 600V, UFS N-CHANNEL IGBT W/

Harris Corporation
3,403 -

RFQ

HGT1S7N60C3DS9A

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2V @ 15V, 7A 60 W 165µJ (on), 600µJ (off) Standard 23 nC - 480V, 7A, 50Ohm, 15V 37 ns - Surface Mount
AIGB40N65F5ATMA1

AIGB40N65F5ATMA1

DISCRETE SWITCHES

Infineon Technologies
2,075 -

RFQ

AIGB40N65F5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 40 A - - - - Standard - - - - - Surface Mount
AIGB40N65H5ATMA1

AIGB40N65H5ATMA1

DISCRETE SWITCHES

Infineon Technologies
2,167 -

RFQ

AIGB40N65H5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 40 A - - - - Standard - - - - - Surface Mount
SGH10N60RUFDTU

SGH10N60RUFDTU

IGBT, 16A, 600V, N-CHANNEL

Fairchild Semiconductor
2,611 -

RFQ

SGH10N60RUFDTU

Ficha técnica

Bulk - Active - 600 V 16 A 30 A 2.8V @ 15V, 10A 75 W 141µJ (on), 215µJ (off) Standard 30 nC 15ns/36ns 300V, 10A, 20Ohm, 15V 60 ns -55°C ~ 150°C (TJ) Through Hole
IHW20N135R3

IHW20N135R3

REVERSE CONDUCTING IGBT W/MONOLT

Infineon Technologies
2,552 -

RFQ

IHW20N135R3

Ficha técnica

Bulk - Active Trench Field Stop 1350 V 40 A 60 A 1.8V @ 15V, 20A 310 W -, 1.3mJ (off) Standard 195 nC -/335ns 600V, 20A, 15Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRGP4069PBF

IRGP4069PBF

IGBT

International Rectifier
2,929 -

RFQ

IRGP4069PBF

Ficha técnica

Tube - Obsolete Trench 600 V 76 A 105 A 1.85V @ 15V, 35A 268 W 390µJ (on), 632µJ (off) Standard 104 nC 46ns/105ns 400V, 35A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
RJP43F4ADPP-90#T2F

RJP43F4ADPP-90#T2F

IGBT 430V, 40A FOR PLASMA TV

Renesas Electronics America Inc
2,988 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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