Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP30E4DPE-00#J3

RJP30E4DPE-00#J3

IGBT

Renesas Electronics America Inc
2,753 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRG8P15N120KDPBF

IRG8P15N120KDPBF

IGBT

International Rectifier
2,319 -

RFQ

IRG8P15N120KDPBF

Ficha técnica

Bulk - Active - 1200 V 30 A 30 A 2V @ 15V, 10A 125 W 600µJ (on), 600µJ (off) Standard 98 nC 15ns/170ns 600V, 10A, 10Ohm, 15V 60 ns -40°C ~ 150°C (TJ) Through Hole
RJP63G4DPE-00#J3

RJP63G4DPE-00#J3

N CH IGBT

Renesas Electronics America Inc
3,338 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGP4262DPBF

IRGP4262DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
3,731 -

RFQ

IRGP4262DPBF

Ficha técnica

Bulk - Active - 650 V 60 A 96 A 2.1V @ 15V, 24A 250 W 520µJ (on), 240µJ (off) Standard 70 nC 24ns/73ns 400V, 24A, 10Ohm, 15V 170 ns -40°C ~ 175°C (TJ) Through Hole
IKWH20N65WR6XKSA1

IKWH20N65WR6XKSA1

IGBT TRENCH

Infineon Technologies
205 -

RFQ

Tube Trenchstop™ 5 Active Trench Field Stop 650 V 55 A 60 A 1.7V @ 15V, 20A 136 W - Standard 97 nC - - - -40°C ~ 175°C (TJ) Through Hole
IRGP4760-EPBF

IRGP4760-EPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
2,640 -

RFQ

IRGP4760-EPBF

Ficha técnica

Bulk - Active - 650 V 90 A 144 A 2V @ 15V, 48A 325 W 1.7mJ (on), 1mJ (off) Standard 145 nC 70ns/140ns 400V, 48A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG7PG35U-EPBF

IRG7PG35U-EPBF

IGBT

International Rectifier
2,009 -

RFQ

IRG7PG35U-EPBF

Ficha técnica

Bulk - Active Trench 1000 V 55 A 60 A 2.2V @ 15V, 20A 210 W 1.06mJ (on), 620µJ (off) Standard 85 nC 30ns/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AIGB50N65F5ATMA1

AIGB50N65F5ATMA1

DISCRETE SWITCHES

Infineon Technologies
2,125 -

RFQ

AIGB50N65F5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 50 A - - - - Standard - - - - - Surface Mount
IRG7PH35UD1PBF

IRG7PH35UD1PBF

IGBT W/ULTRA-LOW VF DIODE FOR IN

International Rectifier
2,599 -

RFQ

IRG7PH35UD1PBF

Ficha técnica

Bulk - Active Trench 1200 V 50 A 150 A 2.2V @ 15V, 20A 179 W 620µJ (off) Standard 130 nC -/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RJP6065DPN-P1#T2

RJP6065DPN-P1#T2

IGBT

Renesas Electronics America Inc
2,621 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXYX110N120A4

IXYX110N120A4

IGBT 1200V 110A GNX4 XPT PLUS247

IXYS
3,737 -

RFQ

IXYX110N120A4

Ficha técnica

Tube XPT™, GenX4™ Active PT 1200 V 375 A 900 A 1.8V @ 15V, 110A 1360 W 2.5mJ (on), 8.4mJ (off) Standard 305 nC 42ns/550ns 600V, 50A, 1.5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYK110N120A4

IXYK110N120A4

IGBT 1200V 110A GENX4 XPT TO-264

IXYS
2,119 -

RFQ

IXYK110N120A4

Ficha técnica

Tube XPT™, GenX4™ Active PT 1200 V 375 A 900 A 1.8V @ 15V, 110A 1360 W 2.5mJ (on), 8.4mJ (off) Standard 305 nC 42ns/550ns 600V, 50A, 1.5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXBT14N300HV

IXBT14N300HV

REVERSE CONDUCTING IGBT

IXYS
2,025 -

RFQ

Tube BIMOSFET™ Active - 3000 V 38 A 120 A 2.7V @ 15V, 14A 200 W - Standard 62 nC - 960V, 14A, 20Ohm, 15V 1.4 µs -55°C ~ 150°C (TJ) Surface Mount
IXA70R1200NA

IXA70R1200NA

DISC IGBT XPT-GENX3 SOT-227B(MIN

IXYS
3,894 -

RFQ

Tube XPT™ Active PT 1200 V 100 A - 2.1V @ 15V, 50A 350 W 4.5mJ (on), 5.5mJ (off) Standard 190 nC 70ns/250ns 600V, 50A, 15Ohm, 15V - - Chassis Mount
IRGP4760PBF

IRGP4760PBF

IGBT WITH RECOVERY DIODE

International Rectifier
3,306 -

RFQ

IRGP4760PBF

Ficha técnica

Tube - Obsolete - 650 V 90 A 144 A 2V @ 15V, 48A 325 W 1.7mJ (on), 1mJ (off) Standard 145 nC 70ns/140ns 400V, 48A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG7PK35UD1-EPBF

IRG7PK35UD1-EPBF

IGBT WITH ULTRAFAST SOFT RECOVER

International Rectifier
2,666 -

RFQ

IRG7PK35UD1-EPBF

Ficha técnica

Bulk - Active - 1400 V 40 A 200 A 2.35V @ 15V, 20A 167 W 650µJ (off) Standard 98 nC -/150ns 600V, 20A, 10Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
RJP3043DPK-80#T2

RJP3043DPK-80#T2

HIGH SPEED IGBT

Renesas Electronics America Inc
3,413 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRG7PH35UD1MPBF

IRG7PH35UD1MPBF

IGBT W/ULTRA-LOW VF DIODE FOR IN

International Rectifier
3,067 -

RFQ

IRG7PH35UD1MPBF

Ficha técnica

Bulk - Active Trench 1200 V 50 A 150 A 2.2V @ 15V, 20A 179 W 620µJ (off) Standard 130 nC -/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKWH30N65WR6XKSA1

IKWH30N65WR6XKSA1

IGBT TRENCH

Infineon Technologies
224 -

RFQ

Tube Trenchstop™ 5 Active Trench Field Stop 650 V 67 A 90 A 1.75V @ 15V, 30A 136 W - Standard 97 nC - - - -40°C ~ 175°C (TJ) Through Hole
RJP43F4ADPP-MB#T2F

RJP43F4ADPP-MB#T2F

IGBT 430V, 40A FOR PLASMA TV

Renesas Electronics America Inc
3,096 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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