Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
HGTP15N50C1

HGTP15N50C1

15A, 500V, N-CHANNEL IGBT

Harris Corporation
3,607 -

RFQ

HGTP15N50C1

Ficha técnica

Bulk - Active - 500 V 15 A 35 A 3.2V @ 20V, 35A 75 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
RJH60T04DPQ-A1#T0

RJH60T04DPQ-A1#T0

IGBT TRENCH 600V 60A TO247A

Renesas Electronics America Inc
700 -

RFQ

RJH60T04DPQ-A1#T0

Ficha técnica

Tube - Active Trench 600 V 60 A - 1.95V @ 15V, 30A 208.3 W - Standard 87 nC 54ns/136ns 400V, 30A, 10Ohm, 15V 100 ns 150°C (TJ) Through Hole
IRGP4750D-EPBF

IRGP4750D-EPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
3,919 -

RFQ

IRGP4750D-EPBF

Ficha técnica

Bulk - Active - 650 V 70 A 105 A 2V @ 15V, 35A 273 W 1.3mJ (on), 500µJ (off) Standard 105 nC 50ns/105ns 400V, 35A, 10Ohm, 15V 150 ns -40°C ~ 175°C (TJ) Through Hole
RJH30H2DPK-M2#T2

RJH30H2DPK-M2#T2

IGBT

Renesas Electronics America Inc
2,772 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRGSL4062D1

AUIRGSL4062D1

IGBT, 59A I(C), 600V V(BR)CES, N

International Rectifier
2,104 -

RFQ

AUIRGSL4062D1

Ficha técnica

Bulk - Active Trench 600 V 59 A 72 A 1.77V @ 15V, 24A 246 W 532µJ (on), 311µJ (off) Standard 77 nC 19ns/90ns 400V, 24A, 10Ohm, 15V 102 ns -55°C ~ 175°C (TJ) Through Hole
RJP4009ANS-WS#Q6

RJP4009ANS-WS#Q6

IGBTS, 400V, 150A, N-CHANNEL

Renesas Electronics America Inc
2,202 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HGT1S12N60A4DS

HGT1S12N60A4DS

IGBT, 54A, 600V, N-CHANNEL, TO-2

Fairchild Semiconductor
2,701 -

RFQ

HGT1S12N60A4DS

Ficha técnica

Bulk - Active - 600 V 54 A 96 A 2.7V @ 15V, 12A 167 W 55µJ (on), 50µJ (off) Standard 120 nC 17ns/96ns 390V, 12A, 10Ohm, 15V 30 ns -55°C ~ 150°C (TJ) Surface Mount
FGB40N6S2T

FGB40N6S2T

N-CHANNEL IGBT

Fairchild Semiconductor
2,900 -

RFQ

FGB40N6S2T

Ficha técnica

Bulk - Obsolete - 600 V 75 A 180 A 2.7V @ 15V, 20A 290 W 115µJ (on), 195µJ (off) Standard 35 nC 8ns/35ns 390V, 20A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IRGP6660D-EPBF

IRGP6660D-EPBF

IGBT WITH RECOVERY DIODE

International Rectifier
2,396 -

RFQ

IRGP6660D-EPBF

Ficha técnica

Tube - Obsolete - 600 V 95 A 144 A 1.95V @ 15V, 48A 330 W 600µJ (on), 1.3mJ (off) Standard 95 nC 60ns/155ns 400V, 48A, 10Ohm, 15V 70 ns -40°C ~ 175°C (TJ) Through Hole
IRG7PH42U-EP

IRG7PH42U-EP

IGBT

International Rectifier
3,278 -

RFQ

IRG7PH42U-EP

Ficha técnica

Bulk - Active Trench 1200 V 90 A 90 A 2V @ 15V, 30A 385 W 2.11mJ (on), 1.18mJ (off) Standard 157 nC 25ns/229ns 600V, 30A, 10Ohm, 15V 153 ns -55°C ~ 175°C (TJ) Through Hole
SGP40N60UFTU

SGP40N60UFTU

N-CHANNEL IGBT

Fairchild Semiconductor
3,201 -

RFQ

SGP40N60UFTU

Ficha técnica

Tube - Obsolete - 600 V 40 A 160 A 2.6V @ 15V, 20A 160 W 160µJ (on), 200µJ (off) Standard 97 nC 15ns/65ns 300V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
BIDW30N60T

BIDW30N60T

IGBT 600V 30A TRENCH TO-247

Bourns Inc.
2,173 -

RFQ

BIDW30N60T

Ficha técnica

Tube - Active Trench Field Stop 600 V 60 A 90 A 1.65V @ 15V, 30A 230 W 1.85mJ (on), 450µJ (off) Standard 76 nC 30ns/67ns 400V, 30A, 10Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Through Hole
SKW07N120

SKW07N120

IGBT, 16.5A, 1200V, N-CHANNEL

Infineon Technologies
3,262 -

RFQ

SKW07N120

Ficha técnica

Bulk - Active NPT 1200 V 16.5 A 27 A 3.6V @ 15V, 8A 125 W 1mJ Standard 70 nC 27ns/440ns 800V, 8A, 47Ohm, 15V 60 ns -55°C ~ 150°C (TJ) Through Hole
IRGP4750DPBF

IRGP4750DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
3,790 -

RFQ

IRGP4750DPBF

Ficha técnica

Tube - Obsolete - 650 V 70 A 105 A 2V @ 15V, 35A 273 W 1.3mJ (on), 500µJ (off) Standard 105 nC 50ns/105ns 400V, 35A, 10Ohm, 15V 150 ns -40°C ~ 175°C (TJ) Through Hole
RJP3047ADPK-80#T2

RJP3047ADPK-80#T2

HIGH SPEED IGBT

Renesas Electronics America Inc
3,166 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJP3047DPK-80#T2

RJP3047DPK-80#T2

HIGH SPEED IGBT

Renesas Electronics America Inc
2,460 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SGH15N120RUFTU

SGH15N120RUFTU

IGBT, 24A, 1200V, N-CHANNEL

Fairchild Semiconductor
2,800 -

RFQ

SGH15N120RUFTU

Ficha técnica

Bulk - Active - 1200 V 24 A 45 A 3V @ 15V, 15A 180 W - Standard 108 nC 20ns/60ns 600V, 15A, 20Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S15N120C3

HGT1S15N120C3

35A, 1200V, N-CHANNEL IGBT

Harris Corporation
2,620 -

RFQ

HGT1S15N120C3

Ficha técnica

Bulk - Active - 1200 V 35 A 120 A 3.5V @ 15V, 15A 164 W - Standard 100 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGT1S15N120C3S

HGT1S15N120C3S

35A, 1200V, N-CHANNEL IGBT

Harris Corporation
695 -

RFQ

HGT1S15N120C3S

Ficha técnica

Bulk - Active - 1200 V 35 A 120 A 3.5V @ 15V, 15A 164 W - Standard 100 nC - - - -55°C ~ 150°C (TJ) Surface Mount
RJH30E3DPK-M0#T2

RJH30E3DPK-M0#T2

IGBT

Renesas Electronics America Inc
2,702 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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