Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT50GN60BDQ3G

APT50GN60BDQ3G

IGBT FIELDSTOP COMBI 600V 50A TO

Microchip Technology
180 -

RFQ

APT50GN60BDQ3G

Ficha técnica

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1.185mJ (on), 1.565mJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V 35 ns -55°C ~ 175°C (TJ) Through Hole
STGW40H120F2

STGW40H120F2

IGBT 1200V 40A HS TO-247

STMicroelectronics
591 -

RFQ

STGW40H120F2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 80 A 160 A 2.6V @ 15V, 40A 468 W 1mJ (on), 1.32mJ (off) Standard 158 nC 18ns/152ns 600V, 40A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
STGY80H65DFB

STGY80H65DFB

IGBT 650V 120A 469W MAX247

STMicroelectronics
362 -

RFQ

STGY80H65DFB

Ficha técnica

Tube - Obsolete Trench Field Stop 650 V 120 A 240 A 2V @ 15V, 80A 469 W 2.1mJ (on), 1.5mJ (off) Standard 414 nC 84ns/280ns 400V, 80A, 10Ohm, 15V 85 ns -55°C ~ 175°C (TJ) Through Hole
NGB8207ABNT4G

NGB8207ABNT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
2,724 -

RFQ

NGB8207ABNT4G

Ficha técnica

Bulk - Active - 365 V 20 A 50 A 2.2V @ 3.7V, 10A 165 W - Logic - - - - -55°C ~ 175°C (TJ) Surface Mount
IKN04N60RC2ATMA1

IKN04N60RC2ATMA1

HOME APPLIANCES 14 PG-SOT223-3

Infineon Technologies
2,409 -

RFQ

IKN04N60RC2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active - 600 V 7.5 A 12 A 2.3V @ 15V, 4A 6.8 W 95µJ (on), 62µJ (off) Standard 24 nC 8ns/126ns 400V, 4A, 49Ohm, 15V 39 ns -40°C ~ 150°C (TJ) Surface Mount
FGPF4536

FGPF4536

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,876 -

RFQ

FGPF4536

Ficha técnica

Bulk - Active Trench 360 V - 220 A 1.8V @ 15V, 50A 28.4 W - Standard 47 nC - - - - Through Hole
IKD04N60RC2ATMA1

IKD04N60RC2ATMA1

IKD04N60RC2ATMA1

Infineon Technologies
2,149 -

RFQ

IKD04N60RC2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchStop™ Active Trench Field Stop 600 V 8 A 12 A 2.3V @ 15V, 4A 36.6 W 100µJ (on), 40µJ (off) Standard 24 nC 4ns/90ns 400V, 4A, 49Ohm, 15V 80 ns -40°C ~ 175°C (TJ) Surface Mount
NGD8205ANT4G

NGD8205ANT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
3,121 -

RFQ

NGD8205ANT4G

Ficha técnica

Bulk - Obsolete - 390 V 20 A 50 A 1.9V @ 4.5V, 20A 125 W - Logic - -/5µs 300V, 9A, 1kOhm, 5V - -55°C ~ 175°C (TJ) Surface Mount
IRGB4B60KD1PBF

IRGB4B60KD1PBF

IRGB4B60K - IGBT WITH ULTRAFAST

International Rectifier
3,155 -

RFQ

Bulk - Obsolete NPT 600 V 11 A 22 A 2.5V @ 15V, 4A 63 W 73µJ (on), 47µJ (off) Standard 12 nC 22ns/100ns 400V, 4A, 100Ohm, 15V 93 ns -55°C ~ 175°C (TJ) Through Hole
NGB8206NTF4G

NGB8206NTF4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
2,413 -

RFQ

NGB8206NTF4G

Ficha técnica

Bulk - Obsolete - 390 V 20 A - 1.9V @ 4.5V, 20A 150 W - Logic - - - - - Surface Mount
IRGB4060DPBF

IRGB4060DPBF

IRGB4060 - DISCRETE IGBT WITH AN

Infineon Technologies
2,600 -

RFQ

IRGB4060DPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IGD15N65T6ARMA1

IGD15N65T6ARMA1

IGD15N65T6ARMA1

Infineon Technologies
3,763 -

RFQ

IGD15N65T6ARMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchStop™ Not For New Designs Trench Field Stop 650 V 30 A 57.5 A 1.9V @ 15V, 11.5A 100 W 230µJ (on), 110µJ (off) Standard 37 nC 30ns/117ns 400V, 11.5A, 47Ohm, 15V - -40°C ~ 175°C (TJ) Surface Mount
ISL9V2040S3ST

ISL9V2040S3ST

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,012 -

RFQ

ISL9V2040S3ST

Ficha técnica

Bulk EcoSPARK® Active - 430 V 10 A - 1.9V @ 4V, 6A 130 W - Logic 12 nC -/3.64µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
IKD10N60RATMA1

IKD10N60RATMA1

IGBT 600V 20A TO252-3

Infineon Technologies
3,774 -

RFQ

IKD10N60RATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchStop™ Active Trench Field Stop 600 V 20 A 30 A 2.1V @ 15V, 10A 150 W 210µJ (on), 380µJ (off) Standard 64 nC 14ns/192ns 400V, 10A, 23Ohm, 15V - -40°C ~ 175°C (TJ) Surface Mount
IRG4BC30UPBF

IRG4BC30UPBF

IRG4BC30 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,831 -

RFQ

IRG4BC30UPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
ISL9V2540S3ST

ISL9V2540S3ST

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,833 -

RFQ

ISL9V2540S3ST

Ficha técnica

Bulk EcoSPARK® Active - 430 V 15.5 A - 1.8V @ 4V, 6A 166.7 W - Logic 15.1 nC -/3.64µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
SGF23N60UFTU

SGF23N60UFTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,671 -

RFQ

SGF23N60UFTU

Ficha técnica

Bulk - Active - 600 V 23 A 92 A 2.6V @ 15V, 12A 75 W 115µJ (on), 135µJ (off) Standard - 17ns/60ns 300V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
SGS10N60RUFDTU

SGS10N60RUFDTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
2,856 -

RFQ

SGS10N60RUFDTU

Ficha técnica

Bulk - Active - 600 V 16 A 30 A 2.8V @ 15V, 10A 55 W 141µJ (on), 215µJ (off) Standard 30 nC 15ns/36ns 300V, 10A, 20Ohm, 15V 60 ns -55°C ~ 150°C (TJ) Through Hole
IRGS6B60KTRLPBF

IRGS6B60KTRLPBF

IRGS6B60 - IGBT WITH ULTRAFAST S

International Rectifier
3,270 -

RFQ

IRGS6B60KTRLPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGA20S140P

FGA20S140P

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,779 -

RFQ

FGA20S140P

Ficha técnica

Bulk - Active Trench Field Stop 1400 V 40 A 60 A 2.4V @ 15V, 20A 272 W - Standard 203.5 nC - - - -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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