Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
AUIRG4BC30S-S

AUIRG4BC30S-S

DISCRETE SWITCHES

Infineon Technologies
3,087 -

RFQ

AUIRG4BC30S-S

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGA50S110P

FGA50S110P

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
2,097 -

RFQ

FGA50S110P

Ficha técnica

Bulk - Active Trench Field Stop 1100 V 50 A 120 A 2.6V @ 15V, 50A 300 W - Standard 195 nC - - - -55°C ~ 175°C (TJ) Through Hole
IGB30N60T

IGB30N60T

IGB30N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,226 -

RFQ

IGB30N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 45 A 90 A 2.05V @ 15V, 30A 187 W 690µJ (on), 770µJ (off) Standard 167 nC 23ns/254ns 400V, 30A, 10.6Ohm, 15V - -40°C ~ 175°C (TJ) Surface Mount
HGTP12N60A4D

HGTP12N60A4D

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,836 -

RFQ

HGTP12N60A4D

Ficha técnica

Bulk - Active - 600 V 54 A 96 A 2.7V @ 15V, 12A 167 W 55µJ (on), 50µJ (off) Standard 78 nC 17ns/96ns 390V, 12A, 10Ohm, 15V 30 ns -55°C ~ 150°C (TJ) Through Hole
FGB3040CS

FGB3040CS

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,505 -

RFQ

FGB3040CS

Ficha técnica

Bulk EcoSPARK® Active - 430 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 15 nC -/4.7µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
FGA40T65UQDF

FGA40T65UQDF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
2,016 -

RFQ

FGA40T65UQDF

Ficha técnica

Bulk - Active NPT 650 V 80 A 120 A 1.67V @ 15V, 40A 231 W 989µJ (on), 310µJ (off) Standard 306 nC 32ns/271ns 400V, 40A, 6Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Through Hole
RGCL80TK60GC11

RGCL80TK60GC11

IGBT

Rohm Semiconductor
2,821 -

RFQ

RGCL80TK60GC11

Ficha técnica

Tube - Active Trench Field Stop 600 V 35 A 160 A 1.8V @ 15V, 40A 57 W 1.11mJ (on), 1.68mJ (off) Standard 98 nC 53ns/227ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGS00TS65DHRC11

RGS00TS65DHRC11

ROHM'S IGBT PRODUCTS WILL CONTRI

Rohm Semiconductor
2,183 -

RFQ

RGS00TS65DHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active Trench Field Stop 650 V 88 A 150 A 2.1V @ 15V, 50A 326 W 1.46mJ (on), 1.29mJ (off) Standard 58 nC 36ns/115ns 400V, 50A, 10Ohm, 15V 103 ns -40°C ~ 175°C (TJ) Through Hole
STGW39NC60VD

STGW39NC60VD

IGBT 600V 80A 250W TO247

STMicroelectronics
2,452 -

RFQ

STGW39NC60VD

Ficha técnica

Tube PowerMESH™ Active - 600 V 80 A 220 A 2.4V @ 15V, 30A 250 W 333µJ (on), 537µJ (off) Standard 126 nC 33ns/178ns 390V, 30A, 10Ohm, 15V 45 ns -55°C ~ 150°C (TJ) Through Hole
RGW60TS65DGC11

RGW60TS65DGC11

650V 30A FIELD STOP TRENCH IGBT

Rohm Semiconductor
3,713 -

RFQ

RGW60TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 60 A 120 A 1.9V @ 15V, 30A 178 W 480µJ (on), 490µJ (off) Standard 84 nC 37ns/114ns 400V, 30A, 10Ohm, 15V 92 ns -40°C ~ 175°C (TJ) Through Hole
RJP60D0DPK-01#T0

RJP60D0DPK-01#T0

RJH60D0 - INSULATED GATE BIPOLAR

Renesas
3,565 -

RFQ

Bulk - Obsolete - 600 V 45 A 90 A 2.2V @ 15V, 22A 140 W - Standard 45 nC 35ns/90ns 300V, 22A, 5Ohm, 15V - 150°C (TJ) Through Hole
IKB20N60H3ATMA1

IKB20N60H3ATMA1

IGBT 600V 40A 170W TO263-3

Infineon Technologies
3,778 -

RFQ

IKB20N60H3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchStop® Active Trench Field Stop 600 V 40 A 80 A 2.4V @ 15V, 20A 170 W 690µJ Standard 120 nC 16ns/194ns 400V, 20A, 14.6Ohm, 15V 112 ns -40°C ~ 175°C (TJ) Surface Mount
AUIRGSL30B60K

AUIRGSL30B60K

AUIRGSL30B60K - AUTOMOTIVE IGBT

International Rectifier
2,195 -

RFQ

AUIRGSL30B60K

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG6B330UDPBF

IRG6B330UDPBF

IRG6B330UD - IGBT WITH ANTI-PARA

International Rectifier
3,641 -

RFQ

IRG6B330UDPBF

Ficha técnica

Bulk - Obsolete Trench 330 V 70 A - 2.76V @ 15V, 120A 160 W - Standard 85 nC 47ns/176ns 196V, 25A, 10Ohm 60 ns -40°C ~ 150°C (TJ) Through Hole
ISL9V3036S3ST

ISL9V3036S3ST

IGBT, 360V, 17A, 1.58V, 300MJ, D

Fairchild Semiconductor
3,620 -

RFQ

ISL9V3036S3ST

Ficha técnica

Bulk EcoSPARK® Active - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
IGP50N60T

IGP50N60T

IGP50N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,175 -

RFQ

IGP50N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 90 A 150 A 2V @ 15V, 50A 333 W 1.2mJ (on), 1.4mJ (off) Standard 310 nC 26ns/299ns 400V, 50A, 7Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG8P08N120KD-EPBF

IRG8P08N120KD-EPBF

IRG8P08N120 - DISCRETE IGBT WITH

International Rectifier
3,018 -

RFQ

IRG8P08N120KD-EPBF

Ficha técnica

Bulk - Obsolete - 1200 V 15 A 15 A 2V @ 15V, 5A 89 W 300µJ (on), 300µJ (off) Standard 45 nC 20ns/160ns 600V, 5A, 47Ohm, 15V 50 ns -40°C ~ 150°C (TJ) Through Hole
NGTG25N120FL2WG

NGTG25N120FL2WG

IGBT, 1200V 25A SOLAR/UPS

onsemi
3,565 -

RFQ

NGTG25N120FL2WG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGA5065ADF

FGA5065ADF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
325 -

RFQ

FGA5065ADF

Ficha técnica

Bulk - Active Trench Field Stop 650 V 100 A 150 A 2.2V @ 15V, 50A 268 W 1.35mJ (on), 309µJ (off) Standard 72.2 nC 20.8ns/62.4ns 400V, 50A, 6Ohm, 15V 31.8 ns -55°C ~ 175°C (TJ) Through Hole
IRGS4062DTRLPBF

IRGS4062DTRLPBF

IRGS4062 - INSULATED GATE BIPOLA

International Rectifier
2,771 -

RFQ

IRGS4062DTRLPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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