Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
STGW20NC60V

STGW20NC60V

IGBT 600V 60A 200W TO247

STMicroelectronics
3,285 -

RFQ

STGW20NC60V

Ficha técnica

Tube PowerMESH™ Active - 600 V 60 A 100 A 2.5V @ 15V, 20A 200 W 220µJ (on), 330µJ (off) Standard 100 nC 31ns/100ns 390V, 20A, 3.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RGCL60TS60GC11

RGCL60TS60GC11

IGBT

Rohm Semiconductor
364 -

RFQ

RGCL60TS60GC11

Ficha técnica

Bulk - Not For New Designs Trench Field Stop 600 V 48 A 120 A 1.8V @ 15V, 30A 111 W 770µJ (on), 1.11mJ (off) Standard 68 nC 44ns/186ns 400V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGCL60TS60DGC11

RGCL60TS60DGC11

IGBT

Rohm Semiconductor
206 -

RFQ

RGCL60TS60DGC11

Ficha técnica

Bulk - Not For New Designs Trench Field Stop 600 V 48 A 120 A 1.8V @ 15V, 30A 111 W 770µJ (on), 1.11mJ (off) Standard 68 nC 44ns/186ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
IHW30N160R5XKSA1

IHW30N160R5XKSA1

HOME APPLIANCES 14

Infineon Technologies
2,702 -

RFQ

IHW30N160R5XKSA1

Ficha técnica

Tube TrenchStop™ Active Trench Field Stop 1600 V 60 A 90 A 2.15V @ 15V, 30A 263 W 2mJ (off) Standard 205 nC -/290ns 600V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
FGA60N65SMD

FGA60N65SMD

IGBT FIELD STOP 650V 120A TO3P

onsemi
3,430 -

RFQ

FGA60N65SMD

Ficha técnica

Tube - Active Field Stop 650 V 120 A 180 A 2.5V @ 15V, 60A 600 W 1.54mJ (on), 450µJ (off) Standard 189 nC 18ns/104ns 400V, 60A, 3Ohm, 15V 47 ns -55°C ~ 175°C (TJ) Through Hole
STGWA25M120DF3

STGWA25M120DF3

IGBT 1200V 50A 375W TO247

STMicroelectronics
2,117 -

RFQ

STGWA25M120DF3

Ficha técnica

Tube - Active Trench Field Stop 1200 V 50 A 100 A 2.3V @ 15V, 25A 375 W 850µJ (on), 1.3mJ (off) Standard 85 nC 28ns/150ns 600V, 25A, 15Ohm, 15V 265 ns -55°C ~ 175°C (TJ) Through Hole
IXXX110N65B4H1

IXXX110N65B4H1

IGBT 650V 240A 880W PLUS247

IXYS
2,549 -

RFQ

IXXX110N65B4H1

Ficha técnica

Tube GenX4™, XPT™ Active PT 650 V 240 A 630 A 2.1V @ 15V, 110A 880 W 2.2mJ (on), 1.05mJ (off) Standard 183 nC 38ns/156ns 400V, 55A, 2Ohm, 15V 100 ns -55°C ~ 175°C (TJ) Through Hole
IXYN50N170CV1

IXYN50N170CV1

IGBT 1700V 120A SOT227B

IXYS
2,092 -

RFQ

IXYN50N170CV1

Ficha técnica

Tube XPT™ Active - 1700 V 120 A 485 A 3.7V @ 15V, 50A 880 W 8.7mJ (on), 5.6mJ (off) Standard 260 nC 22ns/236ns 850V, 50A, 1Ohm, 15V 255 ns -55°C ~ 175°C (TJ) Chassis Mount
IXBX75N170

IXBX75N170

IGBT 1700V 200A 1040W PLUS247

IXYS
3,691 -

RFQ

IXBX75N170

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 200 A 580 A 3.1V @ 15V, 75A 1040 W - Standard 350 nC - - 1.5 µs -55°C ~ 150°C (TJ) Through Hole
IXBK64N250

IXBK64N250

BIMOSFET 2500V 75A MONO TO-247AD

IXYS
3,258 -

RFQ

IXBK64N250

Ficha técnica

Bulk - Active - 2500 V 75 A - 3V @ 15V, 64A 735 W - Standard - - - - - Through Hole
STGB18N40LZT4

STGB18N40LZT4

IGBT 420V 30A 150W D2PAK

STMicroelectronics
2,252 -

RFQ

STGB18N40LZT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerMESH™ Active - 420 V 30 A 40 A 1.7V @ 4.5V, 10A 150 W - Logic 29 nC 650ns/13.5µs 300V, 10A, 5V - -55°C ~ 175°C (TJ) Surface Mount
AOTF10B65M2

AOTF10B65M2

IGBT 650V 10A TO220

Alpha & Omega Semiconductor Inc.
250 -

RFQ

AOTF10B65M2

Ficha técnica

Tube Alpha IGBT™ Active - 650 V 20 A 30 A 2V @ 15V, 10A 30 W 180µJ (on), 130µJ (off) Standard 24 nC 12ns/91ns 400V, 10A, 30Ohm, 15V 262 ns -55°C ~ 150°C (TJ) Through Hole
RGT8NS65DGC9

RGT8NS65DGC9

IGBT

Rohm Semiconductor
975 -

RFQ

RGT8NS65DGC9

Ficha técnica

Tube - Active Trench Field Stop 650 V 8 A 12 A 2.1V @ 15V, 4A 65 W - Standard 13.5 nC 17ns/69ns 400V, 4A, 50Ohm, 15V 40 ns -40°C ~ 175°C (TJ) Through Hole
STGF10NB60SD

STGF10NB60SD

IGBT 600V 23A 25W TO220FP

STMicroelectronics
277 -

RFQ

STGF10NB60SD

Ficha técnica

Tube PowerMESH™ Active - 600 V 23 A 80 A 1.75V @ 15V, 10A 25 W 600µJ (on), 5mJ (off) Standard 33 nC 700ns/1.2µs 480V, 10A, 1kOhm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IKA08N65H5XKSA1

IKA08N65H5XKSA1

IGBT 650V 10.8A TO220-3

Infineon Technologies
3,448 -

RFQ

IKA08N65H5XKSA1

Ficha técnica

Tube TrenchStop® Active - 650 V 10.8 A 24 A 2.1V @ 15V, 8A 31.2 W 70µJ (on), 30µJ (off) Standard 22 nC 11ns/115ns 400V, 4A, 48Ohm, 15V 40 ns -40°C ~ 175°C (TJ) Through Hole
IKA15N65F5XKSA1

IKA15N65F5XKSA1

IGBT 650V 14A TO220-FP

Infineon Technologies
348 -

RFQ

IKA15N65F5XKSA1

Ficha técnica

Tube TrenchStop® Active - 650 V 14 A 45 A 2.1V @ 15V, 15A 33.3 W 130µJ (on), 40µJ (off) Standard 38 nC 17ns/150ns 400V, 7.5A, 39Ohm, 15V 50 ns -40°C ~ 175°C (TJ) Through Hole
IKA15N65H5XKSA1

IKA15N65H5XKSA1

IGBT 650V 14A TO220-3

Infineon Technologies
3,039 -

RFQ

IKA15N65H5XKSA1

Ficha técnica

Tube TrenchStop® Active - 650 V 14 A 45 A 2.1V @ 15V, 15A 33.3 W 120µJ (on), 50µJ (off) Standard 38 nC 17ns/160ns 400V, 7.5A, 39Ohm, 15V 48 ns -40°C ~ 175°C (TJ) Through Hole
RGT16NS65DGC9

RGT16NS65DGC9

IGBT

Rohm Semiconductor
673 -

RFQ

RGT16NS65DGC9

Ficha técnica

Tube - Active Trench Field Stop 650 V 16 A 24 A 2.1V @ 15V, 8A 94 W - Standard 21 nC 13ns/33ns 400V, 8A, 10Ohm, 15V 42 ns -40°C ~ 175°C (TJ) Through Hole
RGT30TM65DGC9

RGT30TM65DGC9

FIELD STOP TRENCH IGBT

Rohm Semiconductor
958 -

RFQ

RGT30TM65DGC9

Ficha técnica

Tube - Active Trench Field Stop 650 V 14 A 45 A 2.1V @ 15V, 15A 32 W - Standard 32 nC 18ns/64ns 400V, 15A, 10Ohm, 15V 55 ns -40°C ~ 175°C (TJ) Through Hole
FGPF15N60UNDF

FGPF15N60UNDF

IGBT 600V 30A 42W TO-220F

onsemi
2,337 -

RFQ

FGPF15N60UNDF

Ficha técnica

Tube - Last Time Buy NPT 600 V 30 A 45 A 2.7V @ 15V, 15A 42 W 370µJ (on), 67µJ (off) Standard 43 nC 9.3ns/54.8ns 400V, 15A, 10Ohm, 15V 82.4 ns -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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