Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
FGBS3040E1-SN00390

FGBS3040E1-SN00390

FGBS3040 - SMART IGN-IGBT TO263-

Fairchild Semiconductor
3,158 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGP6650DPBF

IRGP6650DPBF

IRGP6650 - DISCRETE IGBT WITH AN

Infineon Technologies
3,476 -

RFQ

IRGP6650DPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG7PH35U-EP

IRG7PH35U-EP

IRG7PH35 - DISCRETE IGBT WITHOUT

International Rectifier
3,907 -

RFQ

IRG7PH35U-EP

Ficha técnica

Bulk - Obsolete Trench 1200 V 55 A 60 A 2.2V @ 15V, 20A 210 W 1.06mJ (on), 620µJ (off) Standard 130 nC 30ns/160ns 600V, 20A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
FGB3245G2-F085C

FGB3245G2-F085C

IGNITION IGBT, 450V, 23A, 1.3V

onsemi
3,209 -

RFQ

Tape & Reel (TR) - Active - 450 V 41 A - 1.25V @ 4V, 6A 150 W - Logic 23 nC 900ns/5.4µs 300V, 6.5A, 1kOhm, 5V 2.6 µs -40°C ~ 175°C (TJ) Surface Mount
IRG8P15N120KD-EPBF

IRG8P15N120KD-EPBF

IRG8P15N120 - DISCRETE IGBT WITH

International Rectifier
3,107 -

RFQ

IRG8P15N120KD-EPBF

Ficha técnica

Bulk - Obsolete - 1200 V 30 A 30 A 2V @ 15V, 10A 125 W 600µJ (on), 600µJ (off) Standard 98 nC 15ns/170ns 600V, 10A, 10Ohm, 15V 60 ns -40°C ~ 150°C (TJ) Through Hole
AIKB30N65DF5ATMA1

AIKB30N65DF5ATMA1

IC DISCRETE 650V TO263-3

Infineon Technologies
973 -

RFQ

AIKB30N65DF5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Trench Field Stop 650 V 55 A 90 A 2.1V @ 15V, 30A 188 W 330µJ (on), 100µJ (off) Standard 70 nC 25ns/188ns 400V, 15A, 23Ohm, 15V 67 ns -40°C ~ 175°C (TJ) Surface Mount
IRG8P75N65UD1-EPBF

IRG8P75N65UD1-EPBF

IRG8P75N65 - 650V 75A, IGBT

International Rectifier
3,815 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IRGP4072DPBF

IRGP4072DPBF

IRGP4072D - IGBT WITH ULTRAFAST

International Rectifier
3,751 -

RFQ

Bulk - Obsolete Trench 300 V 70 A 120 A 1.7V @ 15V, 40A 180 W 409µJ (on), 838µJ (off) Standard 73 nC 18ns/144ns 240V, 40A, 10Ohm, 15V 122 ns -55°C ~ 150°C (TJ) Through Hole
IRG8P25N120KD-EPBF

IRG8P25N120KD-EPBF

IRG8P25N120 - DISCRETE IGBT WITH

International Rectifier
3,313 -

RFQ

IRG8P25N120KD-EPBF

Ficha técnica

Bulk - Obsolete - 1200 V 40 A 45 A 2V @ 15V, 15A 180 W 800µJ (on), 900µJ (off) Standard 135 nC 20ns/170ns 600V, 15A, 10Ohm, 15V 70 ns -40°C ~ 150°C (TJ) Through Hole
FGL60N100BNTD

FGL60N100BNTD

1000V, 60A, NPT TRENCH IGBT

onsemi
610 -

RFQ

FGL60N100BNTD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG7PH35UD-EP

IRG7PH35UD-EP

IRG7PH35UD - IGBT WITH ANTI-PARA

International Rectifier
3,311 -

RFQ

IRG7PH35UD-EP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG8P45N65UD1PBF

IRG8P45N65UD1PBF

IRG8P45N65 - 65V, 45A IGBT

International Rectifier
2,617 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IRG8P45N65UD1-EPBF

IRG8P45N65UD1-EPBF

IRG8P45N65 - 650V 45A, IGBT

International Rectifier
3,150 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IRGP50B60PD1-EP

IRGP50B60PD1-EP

IRGP50B60 - DISCRETE IGBT WITH A

International Rectifier
3,899 -

RFQ

IRGP50B60PD1-EP

Ficha técnica

Bulk - Obsolete NPT 600 V 75 A 150 A 2.85V @ 15V, 50A 390 W 255µJ (on), 375µJ (off) Standard 205 nC 30ns/130ns 390V, 33A, 3.3Ohm, 15V 42 ns -55°C ~ 150°C (TJ) Through Hole
IRG8P40N120KDPBF

IRG8P40N120KDPBF

IRG8P40N120 - DISCRETE IGBT WITH

International Rectifier
2,046 -

RFQ

IRG8P40N120KDPBF

Ficha técnica

Bulk - Obsolete - 1200 V 60 A 75 A 2V @ 15V, 25A 305 W 1.6mJ (on), 1.8mJ (off) Standard 240 nC 40ns/245ns 600V, 25A, 10Ohm, 15V 80 ns -40°C ~ 150°C (TJ) Through Hole
IRGP4690DPBF

IRGP4690DPBF

IRGP4690 - DISCRETE IGBT WITH AN

International Rectifier
2,532 -

RFQ

IRGP4690DPBF

Ficha técnica

Bulk - Obsolete - 600 V 140 A 225 A 2.1V @ 15V, 75A 454 W 2.47mJ (on), 2.16mJ (off) Standard 150 nC 50ns/200ns 400V, 75A, 10Ohm, 15V 155 ns -55°C ~ 175°C (TJ) Through Hole
RJH1BF7RDPQ-80#T2

RJH1BF7RDPQ-80#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas
2,522 -

RFQ

Bulk - Obsolete - 1100 V 60 A 100 A 2.35V @ 15V, 60A 250 W - Standard - - - - 150°C (TJ) Through Hole
AUIRGP4062D-E

AUIRGP4062D-E

AUIRGP4062D-E - AUTOMOTIVE IGBT

International Rectifier
3,016 -

RFQ

AUIRGP4062D-E

Ficha técnica

Bulk - Active - 600 V 48 A 72 A 1.95V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 50 nC 41ns/104ns 400V, 24A, 10Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Through Hole
IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

IRG8P50N120 - DISCRETE IGBT WITH

International Rectifier
3,515 -

RFQ

IRG8P50N120KD-EPBF

Ficha técnica

Bulk - Obsolete - 1200 V 80 A 105 A 2V @ 15V, 35A 350 W 2.3mJ (on), 1.9mJ (off) Standard 315 nC 35ns/190ns 600V, 35A, 5Ohm, 15V 170 ns -40°C ~ 150°C (TJ) Through Hole
IRGPS40B120UDP

IRGPS40B120UDP

IRGPS40B120 - DISCRETE IGBT WITH

International Rectifier
112 -

RFQ

IRGPS40B120UDP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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