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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BY251GPHE3/73DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
FES8JTHE3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,081 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
|
BY253P-E3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,183 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
GI1401HE3/45DIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
BY254P-E3/73DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,496 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
VS-MBRA120TRPBFDIODE SCHOTTKY 20V 1A SMA Vishay General Semiconductor - Diodes Division |
3,118 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 450 mV @ 1 A | |
|
|
GI1402HE3/45DIODE GEN PURP 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
BY255GPHE3/73DIODE GEN PURP 1.3KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
VS-MBRS140TRPBFDIODE SCHOTTKY 40V 1A SMB Vishay General Semiconductor - Diodes Division |
3,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 600 mV @ 1 A | |
|
|
GI1403HE3/45DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,144 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
BY299P-E3/73DIODE GEN PURP 800V 2A DO201AD Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 2A | -50°C ~ 125°C | 1.3 V @ 3 A | |
|
|
GI1404HE3/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,731 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
BY448GPHE3/73DIODE GEN PURP 1.65KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
2,520 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 20 µs | 5 µA @ 1650 V | 1650 V | 1.5A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
GUR5H60-E3/45DIODE GEN PURP 600V 5A TO220AC Vishay General Semiconductor - Diodes Division |
3,883 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.8 V @ 5 A | |
|
BA157-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
966 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 125°C | 1.3 V @ 1 A | |
|
VS-E4PH6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
468 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 68 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 2 V @ 60 A |
|
SS10PH9HM3_A/HDIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division |
131 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 90 V | 90 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
|
|
S1D-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
V15PM6-M3/HDIODE SCHOTTKY TMBS 15A 60V SMPC Vishay General Semiconductor - Diodes Division |
675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2300pF @ 4V, 1MHz | - | 1.2 mA @ 60 V | 60 V | 15A | -40°C ~ 175°C | 640 mV @ 15 A |
|
ES3B-E3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
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