Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-20ETF06SLHM3

VS-20ETF06SLHM3

DIODES - D2PAK-E3

Vishay General Semiconductor - Diodes Division
2,168 -

RFQ

VS-20ETF06SLHM3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.67 V @ 60 A
ES3C-E3/57T

ES3C-E3/57T

DIODE GEN PURP 150V 3A DO214AB

Vishay General Semiconductor - Diodes Division
442 -

RFQ

ES3C-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 30 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 900 mV @ 3 A
BY500-100-E3/73

BY500-100-E3/73

DIODE GEN PURP 100V 5A DO201AD

Vishay General Semiconductor - Diodes Division
3,770 -

RFQ

BY500-100-E3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 28pF @ 4V, 1MHz 200 ns 10 µA @ 100 V 100 V 5A 125°C (Max) 1.35 V @ 5 A
GUR5H60HE3/45

GUR5H60HE3/45

DIODE GEN PURP 600V 5A TO220AC

Vishay General Semiconductor - Diodes Division
3,827 -

RFQ

GUR5H60HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 30 ns 20 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.8 V @ 5 A
BY500-400-E3/73

BY500-400-E3/73

DIODE GEN PURP 400V 5A DO201AD

Vishay General Semiconductor - Diodes Division
2,223 -

RFQ

BY500-400-E3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 28pF @ 4V, 1MHz 200 ns 10 µA @ 400 V 400 V 5A -50°C ~ 125°C 1.35 V @ 5 A
SS10PH9-M3/86A

SS10PH9-M3/86A

DIODE SCHOTTKY 90V 10A TO277A

Vishay General Semiconductor - Diodes Division
238 -

RFQ

SS10PH9-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 270pF @ 4V, 1MHz - 10 µA @ 90 V 90 V 10A -55°C ~ 175°C 880 mV @ 10 A
1N4935-E3/54

1N4935-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
158 -

RFQ

1N4935-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 12pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -50°C ~ 150°C 1.2 V @ 1 A
VS-5EWL06FNTR-M3

VS-5EWL06FNTR-M3

DIODE GEN PURP 600V 5A DPAK

Vishay General Semiconductor - Diodes Division
475 -

RFQ

VS-5EWL06FNTR-M3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 145 ns 5 µA @ 600 V 600 V 5A -65°C ~ 175°C 1.2 V @ 5 A
V4PAN50-M3/I

V4PAN50-M3/I

DIODE SCHOTTKY 50V 3A DO221BC

Vishay General Semiconductor - Diodes Division
311 -

RFQ

V4PAN50-M3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 480pF @ 4V, 1MHz - 600 µA @ 50 V 50 V 3A -40°C ~ 150°C 430 mV @ 2 A
GURB5H60HE3/45

GURB5H60HE3/45

DIODE GEN PURP 600V 5A TO263AB

Vishay General Semiconductor - Diodes Division
3,292 -

RFQ

GURB5H60HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 30 ns 20 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.8 V @ 5 A
V8P12-M3/86A

V8P12-M3/86A

DIODE SCHOTTKY 8A 120V TO-277A

Vishay General Semiconductor - Diodes Division
457 -

RFQ

V8P12-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 120 V 120 V 8A -40°C ~ 150°C 840 mV @ 8 A
BY500-600-E3/73

BY500-600-E3/73

DIODE GEN PURP 600V 5A DO201AD

Vishay General Semiconductor - Diodes Division
2,530 -

RFQ

BY500-600-E3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 28pF @ 4V, 1MHz 200 ns 10 µA @ 600 V 600 V 5A 125°C (Max) 1.35 V @ 5 A
GURF5H60-E3/45

GURF5H60-E3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division
3,267 -

RFQ

GURF5H60-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 30 ns 20 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.8 V @ 5 A
BY500-800-E3/73

BY500-800-E3/73

DIODE GEN PURP 800V 5A DO201AD

Vishay General Semiconductor - Diodes Division
3,275 -

RFQ

BY500-800-E3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 28pF @ 4V, 1MHz 200 ns 10 µA @ 800 V 800 V 5A 125°C (Max) 1.35 V @ 5 A
GURF5H60HE3/45

GURF5H60HE3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division
2,537 -

RFQ

GURF5H60HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 30 ns 20 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.8 V @ 5 A
VS-10ETF02FPPBF

VS-10ETF02FPPBF

DIODE GEN PURP 200V 10A TO220FP

Vishay General Semiconductor - Diodes Division
2,720 -

RFQ

VS-10ETF02FPPBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 200 ns - 200 V 10A -40°C ~ 150°C 1.2 V @ 10 A
BYD13DGP-E3/73

BYD13DGP-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,850 -

RFQ

BYD13DGP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
M2035S-E3/4W

M2035S-E3/4W

DIODE SCHOTTKY 35V 20A TO220AB

Vishay General Semiconductor - Diodes Division
3,672 -

RFQ

M2035S-E3/4W

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 200 µA @ 35 V 35 V 20A -55°C ~ 150°C 700 mV @ 20 A
CSA2J-E3/I

CSA2J-E3/I

DIODE GPP 2A 600V DO-214AC SMA

Vishay General Semiconductor - Diodes Division
256 -

RFQ

CSA2J-E3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 11pF @ 4V, 1MHz 2.1 µs 5 µA @ 600 V 600 V 1.6A -55°C ~ 150°C 1.15 V @ 2 A
SS12P2L-M3/86A

SS12P2L-M3/86A

DIODE SCHOTTKY 20V 12A TO277A

Vishay General Semiconductor - Diodes Division
118 -

RFQ

SS12P2L-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 930pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 12A -55°C ~ 150°C 560 mV @ 12 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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