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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETF04FPPBFDIODE GEN PURP 400V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,118 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 200 ns | - | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | ||
|
BYD13DGPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | - | |
|
M2045S-E3/4WDIODE SCHOTTKY 45V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,703 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 700 mV @ 20 A | |
|
VS-10ETF06FPPBFDIODE GEN PURP 600V 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,579 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 200 ns | - | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
BYD13GGP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 3 µs | 5 µA @ 200 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
M3035S-E3/4WDIODE SCHOTTKY 35V 30A TO220AB Vishay General Semiconductor - Diodes Division |
2,581 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 35 V | 35 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A | |
|
|
VS-10ETF10FPPBFDIODE GEN PURP 1KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,943 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 310 ns | - | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
BYD13GGPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,040 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
M3045S-E3/4WDIODE SCHOTTKY 45V 30A TO220AB Vishay General Semiconductor - Diodes Division |
2,266 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 45 V | 45 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A | |
|
|
VS-10ETF12FPPBFDIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,498 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 310 ns | - | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
V20PW60-M3/IDIODE SCHOTTKY 60V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2250pF @ 4V, 1MHz | - | 3.6 mA @ 60 V | 60 V | 20A | -40°C ~ 150°C | 660 mV @ 20 A |
|
|
BYD13JGP-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,968 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | - | 600 V | 1A | -65°C ~ 175°C | - | |
|
MB3045S-E3/4WDIODE SCHOTTKY 45V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,762 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A | |
|
|
VS-10ETS08FPPBFDIODE GEN PURP 800V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,251 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
BYD13JGPHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,901 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 1V, 1MHz | 3 µs | 5 µA @ 200 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
MBR1035-E3/45DIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,912 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
VS-10ETS12FPPBFDIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,551 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
BYD13KGP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,268 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
MSE07PGHM3/89ADIODE GP 400V 700MA MICROSMP Vishay General Semiconductor - Diodes Division |
170 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 400 V | 400 V | 700mA | -55°C ~ 175°C | 1.08 V @ 700 mA |
|
BAQ33-GS18DIODE GEN PURP 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
151 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Last Time Buy | Surface Mount | 3pF @ 0V, 1MHz | - | 1 nA @ 15 V | 30 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA |
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