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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBR1035HE3/45DIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,786 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
VS-18TQ050PBFDIODE SCHOTTKY 50V 18A TO220AC Vishay General Semiconductor - Diodes Division |
3,278 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2.5 mA @ 50 V | 50 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | ||
|
BYD13KGPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
MBR1045HE3/45DIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,006 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
VS-20ETF04PBFDIODE GEN PURP 400V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,049 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
BYD13MGP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
MBR1050-E3/45DIODE SCHOTTKY 50V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,872 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
VS-30CPF02PBFDIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,122 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
BYD13MGPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | - | |
|
|
MBR1050HE3/45DIODE SCHOTTKY 50V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,678 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
VS-30CPF06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
VS-1EFH02HM3/IDIODE GEN PURP 200V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,657 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 930 mV @ 1 A |
|
|
1N5393-E3/54DIODE GEN PURP 200V 1.5A DO204AL Vishay General Semiconductor - Diodes Division |
831 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1.5A | -50°C ~ 150°C | 1.4 V @ 1.5 A | |
|
|
BYD33DGP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,322 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | - | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
MBR1060HE3/45DIODE SCHOTTKY 60V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
VS-30CPF12PBFDIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,868 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
BYD33DGPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,747 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
MUR420-E3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
209 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | |
|
|
MBR10H100HE3/45DIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,204 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
VS-30EPF02PBFDIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,288 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A |
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