Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-10BQ015-M3/5BT

VS-10BQ015-M3/5BT

DIODE SCHOTTKY 15V 1A DO214AA

Vishay General Semiconductor - Diodes Division
43,470 -

RFQ

VS-10BQ015-M3/5BT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 390pF @ 5V, 1MHz - 500 µA @ 15 V 15 V 1A -55°C ~ 125°C 390 mV @ 2 A
RS07K-M-08

RS07K-M-08

DIODE GP 800V 500MA DO219AB

Vishay General Semiconductor - Diodes Division
194 -

RFQ

RS07K-M-08

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 300 ns 2 µA @ 800 V 800 V 500mA -65°C ~ 175°C 1.3 V @ 1 A
VS-10BQ040-M3/5BT

VS-10BQ040-M3/5BT

DIODE SCHOTTKY 40V 1A SMB

Vishay General Semiconductor - Diodes Division
2,163 -

RFQ

VS-10BQ040-M3/5BT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 115pF @ 5V, 1MHz - 100 µA @ 40 V 40 V 1A -55°C ~ 150°C 450 mV @ 1 A
UF5407-E3/54

UF5407-E3/54

DIODE GEN PURP 800V 3A DO201AD

Vishay General Semiconductor - Diodes Division
166 -

RFQ

UF5407-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
1N3957GP-E3/73

1N3957GP-E3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,215 -

RFQ

1N3957GP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1 V @ 1 A
BYW27-200GP-E3/73

BYW27-200GP-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,860 -

RFQ

BYW27-200GP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 3 µs 200 nA @ 200 V 200 V 1A -65°C ~ 175°C 1 V @ 1 A
FGP10D-E3/54

FGP10D-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,657 -

RFQ

FGP10D-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 25pF @ 4V, 1MHz 35 ns 2 µA @ 200 V 200 V 1A -65°C ~ 175°C 950 mV @ 1 A
VS-80EPF02PBF

VS-80EPF02PBF

DIODE GEN PURP 200V 80A TO247AC

Vishay General Semiconductor - Diodes Division
2,705 -

RFQ

VS-80EPF02PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 190 ns 100 µA @ 200 V 200 V 80A -40°C ~ 150°C 1.25 V @ 80 A
MBR16H45-E3/45

MBR16H45-E3/45

DIODE SCHOTTKY 45V 16A TO220AC

Vishay General Semiconductor - Diodes Division
2,651 -

RFQ

MBR16H45-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 45 V 45 V 16A -65°C ~ 175°C 660 mV @ 16 A
1N3957GPHE3/73

1N3957GPHE3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,594 -

RFQ

1N3957GPHE3/73

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1 V @ 1 A
BYW27-200GPHE3/73

BYW27-200GPHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,019 -

RFQ

BYW27-200GPHE3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 200 nA @ 200 V 200 V 1A -65°C ~ 175°C 1 V @ 1 A
FGP20D-E3/54

FGP20D-E3/54

DIODE GEN PURP 200V 2A DO204AC

Vishay General Semiconductor - Diodes Division
3,314 -

RFQ

FGP20D-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 45pF @ 4V, 1MHz 35 ns 2 µA @ 200 V 200 V 2A -65°C ~ 175°C 950 mV @ 2 A
VS-80EPF04PBF

VS-80EPF04PBF

DIODE GEN PURP 400V 80A TO247AC

Vishay General Semiconductor - Diodes Division
2,514 -

RFQ

VS-80EPF04PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 190 ns 100 µA @ 400 V 400 V 80A -40°C ~ 150°C 1.25 V @ 80 A
MBR16H45HE3/45

MBR16H45HE3/45

DIODE SCHOTTKY 45V 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,586 -

RFQ

MBR16H45HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 45 V 45 V 16A -65°C ~ 175°C 660 mV @ 16 A
1N4001GPE-E3/73

1N4001GPE-E3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,054 -

RFQ

1N4001GPE-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BYW27-400GP-E3/73

BYW27-400GP-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,510 -

RFQ

BYW27-400GP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 3 µs 200 nA @ 400 V 400 V 1A -65°C ~ 175°C 1 V @ 1 A
FGP30D-E3/54

FGP30D-E3/54

DIODE GEN PURP 200V 3A DO204AC

Vishay General Semiconductor - Diodes Division
3,389 -

RFQ

FGP30D-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 70pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 950 mV @ 3 A
VS-80EPF10PBF

VS-80EPF10PBF

DIODE GEN PURP 1KV 80A TO247AC

Vishay General Semiconductor - Diodes Division
2,417 -

RFQ

VS-80EPF10PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1000 V 1000 V 80A -40°C ~ 150°C 1.35 V @ 80 A
MBR16H50-E3/45

MBR16H50-E3/45

DIODE SCHOTTKY 50V 16A TO220AC

Vishay General Semiconductor - Diodes Division
2,328 -

RFQ

MBR16H50-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 50 V 50 V 16A -65°C ~ 175°C 730 mV @ 16 A
1N4001GPEHE3/73

1N4001GPEHE3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,892 -

RFQ

1N4001GPEHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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