Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DGP15HE3/73

DGP15HE3/73

DIODE GEN PURP 1.5KV 1.5A DO204

Vishay General Semiconductor - Diodes Division
2,965 -

RFQ

DGP15HE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 20 µs 5 µA @ 1500 V 1500 V 1.5A -65°C ~ 175°C 1.1 V @ 1 A
VS-20ETF02PBF

VS-20ETF02PBF

DIODE GEN PURP 200V 20A TO220AC

Vishay General Semiconductor - Diodes Division
2,976 -

RFQ

VS-20ETF02PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
MBR735-E3/45

MBR735-E3/45

DIODE SCHOTTKY 35V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
3,853 -

RFQ

MBR735-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 7.5A -65°C ~ 175°C 840 mV @ 15 A
1N4002GPEHE3/73

1N4002GPEHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,397 -

RFQ

1N4002GPEHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10A-E3/73

EGP10A-E3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,427 -

RFQ

EGP10A-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 150°C 950 mV @ 1 A
VS-20ETF08PBF

VS-20ETF08PBF

DIODE GEN PURP 800V 20A TO220FP

Vishay General Semiconductor - Diodes Division
3,433 -

RFQ

VS-20ETF08PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 400 ns 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.31 V @ 20 A
MBR735HE3/45

MBR735HE3/45

DIODE SCHOTTKY 35V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
3,377 -

RFQ

MBR735HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 7.5A -65°C ~ 175°C 840 mV @ 15 A
1N4002GPHE3/73

1N4002GPHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,881 -

RFQ

1N4002GPHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10AHE3/73

EGP10AHE3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,275 -

RFQ

EGP10AHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 150°C 950 mV @ 1 A
EGP50G-E3/54

EGP50G-E3/54

DIODE GEN PURP 400V 5A GP20

Vishay General Semiconductor - Diodes Division
2,729 -

RFQ

EGP50G-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 5A -65°C ~ 150°C 1.25 V @ 5 A
VS-20ETF12PBF

VS-20ETF12PBF

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division
3,821 -

RFQ

VS-20ETF12PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 400 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
MBR745HE3/45

MBR745HE3/45

DIODE SCHOTTKY 45V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
3,134 -

RFQ

MBR745HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 45 V 45 V 7.5A -65°C ~ 175°C 840 mV @ 15 A
1N4003GPHE3/73

1N4003GPHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,909 -

RFQ

1N4003GPHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10B-E3/73

EGP10B-E3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,147 -

RFQ

EGP10B-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 950 mV @ 1 A
SB040-E3/54

SB040-E3/54

DIODE SCHOTTKY 40V 600MA MPG06

Vishay General Semiconductor - Diodes Division
3,005 -

RFQ

SB040-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 40 V 40 V 600mA -65°C ~ 125°C 550 mV @ 600 mA
VS-20ETS08FPPBF

VS-20ETS08FPPBF

DIODE GEN PURP 800V 20A TO220FP

Vishay General Semiconductor - Diodes Division
3,585 -

RFQ

VS-20ETS08FPPBF

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 100 µA @ 800 V 800 V 20A -40°C ~ 150°C 1.1 V @ 20 A
MBR750-E3/45

MBR750-E3/45

DIODE SCHOTTKY 50V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
3,794 -

RFQ

MBR750-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 50 V 50 V 7.5A -65°C ~ 175°C 750 mV @ 7.5 A
1N4004GP-E3/73

1N4004GP-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,239 -

RFQ

1N4004GP-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N5627-TR

1N5627-TR

DIODE AVALANCHE 800V 3A SOD64

Vishay General Semiconductor - Diodes Division
192 -

RFQ

1N5627-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 60pF @ 4V, 1MHz 7.5 µs 1 µA @ 800 V 800 V 3A -55°C ~ 175°C 1 V @ 3 A
SS8PH9HM3_A/H

SS8PH9HM3_A/H

DIODE SCHOTTKY 90V 8A TO277A

Vishay General Semiconductor - Diodes Division
900 -

RFQ

SS8PH9HM3_A/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 140pF @ 4V, 1MHz - 2 µA @ 90 V 90 V 8A -55°C ~ 175°C 900 mV @ 8 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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