Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
V3PM12-M3/H

V3PM12-M3/H

SCHOTTKY RECTIFIER 3A 120V SMP

Vishay General Semiconductor - Diodes Division
769 -

RFQ

V3PM12-M3/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 290pF @ 4V, 1MHz - 300 µA @ 120 V 120 V 1.9A -40°C ~ 175°C 620 mV @ 1.5 A
VS-2ENH01-M3/84A

VS-2ENH01-M3/84A

FRED PT RECTIFIER 2A SMP

Vishay General Semiconductor - Diodes Division
714 -

RFQ

VS-2ENH01-M3/84A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 28 ns 2 µA @ 100 V 100 V 2A -55°C ~ 175°C 1 V @ 2 A
EGP10BHE3/73

EGP10BHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,814 -

RFQ

EGP10BHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 950 mV @ 1 A
VS-30CPF10PBF

VS-30CPF10PBF

DIODE GEN PURP 1KV 30A TO247AC

Vishay General Semiconductor - Diodes Division
2,321 -

RFQ

VS-30CPF10PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 450 ns 100 µA @ 1000 V 1000 V 30A -40°C ~ 150°C 1.41 V @ 30 A
MBR750HE3/45

MBR750HE3/45

DIODE SCHOTTKY 50V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
3,781 -

RFQ

MBR750HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 50 V 50 V 7.5A -65°C ~ 175°C 750 mV @ 7.5 A
1N4004GPE-E3/73

1N4004GPE-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,256 -

RFQ

1N4004GPE-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
VSSAF3L45-M3/6A

VSSAF3L45-M3/6A

DIODE SCHOTTKY 45V 3A DO221AC

Vishay General Semiconductor - Diodes Division
289 -

RFQ

VSSAF3L45-M3/6A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 425pF @ 4V, 1MHz - 450 µA @ 45 V 45 V 3A (DC) -40°C ~ 150°C 540 mV @ 3 A
EGP10C-E3/73

EGP10C-E3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,940 -

RFQ

EGP10C-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 150°C 950 mV @ 1 A
1N5618GP-E3/54

1N5618GP-E3/54

DIODE GEN PURP 600V 1A DO204AC

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

1N5618GP-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 25pF @ 12V, 1MHz 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 175°C 1.2 V @ 1 A
VS-30EPF10PBF

VS-30EPF10PBF

DIODE GEN PURP 1KV 30A TO247AC

Vishay General Semiconductor - Diodes Division
3,829 -

RFQ

VS-30EPF10PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 450 ns 100 µA @ 1000 V 1000 V 30A -40°C ~ 150°C 1.41 V @ 30 A
MBR760HE3/45

MBR760HE3/45

DIODE SCHOTTKY 60V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
2,286 -

RFQ

MBR760HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 60 V 60 V 7.5A -65°C ~ 175°C 750 mV @ 7.5 A
1N4004GPEHE3/73

1N4004GPEHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,366 -

RFQ

1N4004GPEHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10CHE3/73

EGP10CHE3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,975 -

RFQ

EGP10CHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 150°C 950 mV @ 1 A
1N5622GP-E3/54

1N5622GP-E3/54

DIODE GEN PURP 1KV 1A DO204AC

Vishay General Semiconductor - Diodes Division
3,774 -

RFQ

1N5622GP-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 12V, 1MHz 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.2 V @ 1 A
VS-60APU06PBF

VS-60APU06PBF

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,948 -

RFQ

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 81 ns 50 µA @ 600 V 600 V 60A -55°C ~ 175°C 1.68 V @ 60 A
MBR7H35-E3/45

MBR7H35-E3/45

DIODE SCHOTTKY 35V 7.5A TO220AC

Vishay General Semiconductor - Diodes Division
2,240 -

RFQ

MBR7H35-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 50 µA @ 35 V 35 V 7.5A -65°C ~ 175°C 630 mV @ 7.5 A
1N4004GPHE3/73

1N4004GPHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,949 -

RFQ

1N4004GPHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10D-E3/73

EGP10D-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,023 -

RFQ

EGP10D-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -65°C ~ 150°C 950 mV @ 1 A
1N5625GP-E3/54

1N5625GP-E3/54

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,272 -

RFQ

1N5625GP-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 40pF @ 4V, 1MHz 5 µs 5 µA @ 400 V 400 V 3A -65°C ~ 175°C 1 V @ 3 A
VS-60CPF02PBF

VS-60CPF02PBF

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,288 -

RFQ

VS-60CPF02PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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