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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-20ETF10PBFDIODE GEN PURP 1KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,797 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 160 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
1N4246GPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,681 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
EGP20F-E3/73DIODE GEN PURP 300V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,961 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
|
VS-20ETS08PBFDIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,344 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 1000 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
1N4247GP-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,679 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
EGP20FHE3/73DIODE GEN PURP 300V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
|
VS-20ETS12PBFDIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,284 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
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|
V3PM6-M3/HSCHOTTKY RECTIFIER 3A 60V SMP Vishay General Semiconductor - Diodes Division |
190 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 2.4A | -40°C ~ 175°C | 500 mV @ 1.5 A |
|
MBRB745-E3/81DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
700 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
|
1N4247GPHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,104 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
EGP20G-E3/73DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,344 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
VS-20ETS12FPPBFDIODE GEN PURP 1.2KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,870 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
1N4248GP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,842 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
EGP20GHE3/73DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,338 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
VS-30CPF04PBFDIODE GEN PURP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,808 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
UF5401-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
280 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
1N4248GPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,306 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
EGP30B-E3/73DIODE GEN PURP 100V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
VS-30EPF06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,022 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
1N4249GP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,390 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
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