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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETS08PBFDIODE GEN PURP 800V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,012 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | ||
|
1N4006GP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,040 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
EGP20AHE3/73DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,353 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
VS-10ETS12PBFDIODE GEN PURP 1.2KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,904 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
1N4006GPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,373 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP20BHE3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
VS-20ETF04FPPBFDIODE GEN PURP 400V 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,613 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
VS-10MQ040NTRPBFDIODE SCHOTTKY 40V 1A SMA Vishay General Semiconductor - Diodes Division |
221 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 38pF @ 10V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 540 mV @ 1 A | |
|
VS-8ETH03PBFDIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
165 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
BYM10-400-E3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
BYT56M-TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
630 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
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|
V3PM15-M3/HSCHOTTKY RECTIFIER 3A 150V SMP Vishay General Semiconductor - Diodes Division |
276 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 1.8A | -40°C ~ 175°C | 760 mV @ 1.5 A |
|
|
1N4007GPEHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP20C-E3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,081 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
VS-20ETF06PBFDIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,962 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N4007GPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,202 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP20CHE3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,757 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
VS-20ETF06FPPBFDIODE GEN PURP 600V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,608 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N4246GP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,934 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
EGP20DHE3/73DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
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