Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYW27-400GPHE3/73

BYW27-400GPHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,477 -

RFQ

BYW27-400GPHE3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 200 nA @ 400 V 400 V 1A -65°C ~ 175°C 1 V @ 1 A
FGP50D-E3/54

FGP50D-E3/54

DIODE GEN PURP 200V 5A GP20

Vishay General Semiconductor - Diodes Division
2,710 -

RFQ

FGP50D-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 5A -65°C ~ 175°C 950 mV @ 5 A
VS-20ETF02FPPBF

VS-20ETF02FPPBF

DIODE GEN PURP 200V 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,116 -

RFQ

VS-20ETF02FPPBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
MBR16H50HE3/45

MBR16H50HE3/45

DIODE SCHOTTKY 50V 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,915 -

RFQ

MBR16H50HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 50 V 50 V 16A -65°C ~ 175°C 730 mV @ 16 A
1N4001GPHE3/73

1N4001GPHE3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,217 -

RFQ

1N4001GPHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BYX10GP-E3/73

BYX10GP-E3/73

DIODE GEN PURP 1.6KV 360MA DO204

Vishay General Semiconductor - Diodes Division
3,340 -

RFQ

BYX10GP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 1600 V 1600 V 360mA -65°C ~ 175°C 1.6 V @ 2 A
VSB2200S-M3/54

VSB2200S-M3/54

DIODE SCHOTTKY 200V 2A DO204AL

Vishay General Semiconductor - Diodes Division
2,050 -

RFQ

VSB2200S-M3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 110pF @ 4V, 1MHz - 40 µA @ 200 V 200 V 2A -40°C ~ 150°C 1.23 V @ 2 A
VS-20ETF10FPPBF

VS-20ETF10FPPBF

DIODE GEN PURP 1KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,228 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 400 ns 100 µA @ 1000 V 1000 V 20A -40°C ~ 150°C 1.31 V @ 20 A
MBR16H60-E3/45

MBR16H60-E3/45

DIODE SCHOTTKY 60V 16A TO220AC

Vishay General Semiconductor - Diodes Division
2,262 -

RFQ

MBR16H60-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 60 V 60 V 16A -65°C ~ 175°C 730 mV @ 16 A
RMPG06D-E3/54

RMPG06D-E3/54

DIODE GEN PURP 200V 1A MPG06

Vishay General Semiconductor - Diodes Division
149 -

RFQ

RMPG06D-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
CS3K-E3/I

CS3K-E3/I

DIODE GPP 800V 2A DO-214AB SMC

Vishay General Semiconductor - Diodes Division
140 -

RFQ

CS3K-E3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 26pF @ 4V, 1MHz 2.8 µs 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.15 V @ 3 A
V20DL45HM3_A/I

V20DL45HM3_A/I

DIODE SCHOTTKY 45V 20A TO263AC

Vishay General Semiconductor - Diodes Division
575 -

RFQ

V20DL45HM3_A/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 2.5 mA @ 45 V 45 V 20A -40°C ~ 150°C 640 mV @ 20 A
SS10PH45HM3_A/H

SS10PH45HM3_A/H

DIODE SCHOTTKY 45V 10A TO277A

Vishay General Semiconductor - Diodes Division
162 -

RFQ

SS10PH45HM3_A/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 4V, 1MHz - 80 µA @ 45 V 45 V 10A -55°C ~ 175°C 720 mV @ 10 A
1N5418TR

1N5418TR

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division
647 -

RFQ

1N5418TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 1 µA @ 400 V 400 V 3A -55°C ~ 175°C 1.5 V @ 9 A
1N4002GP-E3/73

1N4002GP-E3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,345 -

RFQ

1N4002GP-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BYX10GPHE3/73

BYX10GPHE3/73

DIODE GEN PURP 1.6KV 360MA DO204

Vishay General Semiconductor - Diodes Division
2,939 -

RFQ

BYX10GPHE3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 2 µs 1 µA @ 1600 V 1600 V 360mA -65°C ~ 175°C 1.6 V @ 2 A
VSB3200-M3/54

VSB3200-M3/54

DIODE SCHOTTKY 200V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,657 -

RFQ

VSB3200-M3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 175pF @ 4V, 1MHz - 60 µA @ 200 V 200 V 3A -40°C ~ 150°C 1.2 V @ 3 A
VS-20ETF12FPPBF

VS-20ETF12FPPBF

DIODE GEN PURP 1.2KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
3,470 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 400 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.31 V @ 20 A
MBR16H60HE3/45

MBR16H60HE3/45

DIODE SCHOTTKY 60V 16A TO220AC

Vishay General Semiconductor - Diodes Division
3,484 -

RFQ

MBR16H60HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 60 V 60 V 16A -65°C ~ 175°C 730 mV @ 16 A
1N4002GPE-E3/73

1N4002GPE-E3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,283 -

RFQ

1N4002GPE-E3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz 2 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
Total 11674 Record«Prev1... 320321322323324325326327...584Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário