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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EGP30BHE3/73DIODE GEN PURP 100V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,475 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
VS-40EPF04PBFDIODE GEN PURP 400V 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,611 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 400 V | 400 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | ||
|
VS-HFA04TB60STRRPDIODE GEN PURP 600V 4A D2PAK Vishay General Semiconductor - Diodes Division |
2,324 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
1N4249GPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,328 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
EGP30C-E3/73DIODE GEN PURP 150V 3A GP20 Vishay General Semiconductor - Diodes Division |
2,668 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
|
VS-40EPF06PBFDIODE GEN PURP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,771 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 40A | -40°C ~ 150°C | 1.25 V @ 40 A | ||
|
|
VS-HFA06TB120STRLPDIODE GEN PURP 1.2KV 6A D2PAK Vishay General Semiconductor - Diodes Division |
3,645 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A (DC) | -55°C ~ 150°C | 3 V @ 6 A |
|
1N4384GP-E3/73DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,850 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGP30CHE3/73DIODE GEN PURP 150V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,315 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
VS-30WQ04FNTR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
939 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A | |
|
BYV98-200-TRDIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division |
728 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
V10PM45-M3/HDIODE SCHOTTKY TMBS 10A 45V SMPC Vishay General Semiconductor - Diodes Division |
684 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1850pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 600 mV @ 10 A |
|
|
BYW178-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
577 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 60 ns | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.9 V @ 3 A | |
|
|
VS-30WQ03FNTRLPBFDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
2,821 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 290pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
1N4384GPHE3/73DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,568 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGP30D-E3/73DIODE GEN PURP 200V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,379 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
|
VS-30WQ03FNTRPBFDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
3,453 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 290pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
1N4586GP-E3/73DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGP30DHE3/73DIODE GEN PURP 200V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,908 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
|
VS-30WQ03FNTRRPBFDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
2,915 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 290pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A |
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