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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
2,813 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
HSM3100GE3/TR13DIODE SCHOTTKY 100V 3A DO215AB Microchip Technology |
3,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 810 mV @ 3 A | |
|
JANTX1N5804US/TRRECTIFIER UFR,FRR Microchip Technology |
3,491 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
|
1N5806E3RECTIFIER UFR,FRR Microchip Technology |
3,895 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | |
|
VS-HFA04SD60STRHM3DIODE GEN PURP 600V 4A D-PAK Vishay General Semiconductor - Diodes Division |
3,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
|
1N5615DIODE GEN PURP 200V 2A AXIAL Semtech Corporation |
3,326 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 5V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
|
VS-70HF30DIODE GEN PURP 300V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,625 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 300 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
FFSP2065ADIODE SCHOTTKY 650V 25A TO220-2 onsemi |
769 | - |
RFQ |
Ficha técnica |
Tube,Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1085pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 25A (DC) | -55°C ~ 175°C | 1.75 V @ 20 A | |
|
1N3294RADO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,921 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 800 V | 800 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | ||
|
STPSC15H12DYDIODE SCHOTTKY 1.2KV 15A TO220AC STMicroelectronics |
3,536 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 90 µA @ 1200 V | 1200 V | 15A | -40°C ~ 175°C | 1.5 V @ 15 A |
|
|
1N3291RADO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,913 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 400 V | 400 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | ||
|
VS-70HFR20DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,280 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 15 mA @ 200 V | 200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
1N3288RDO8 100 AMP SILICON RECTIFIER Solid State Inc. |
3,801 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 100 V | 100 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
MSC030SDA120KUNRLS, FG, GEN2, SIC SBD, TO-220 Microchip Technology |
3,142 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 30A (DC) | -55°C ~ 175°C | - | |
|
|
1N3288ADO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,268 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 100 V | 100 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
KSF30F60BDIODE FAST RECOVERY 600V 30A TO- KYOCERA AVX |
3,791 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.7 V @ 30 A | |
|
|
1N2439RDO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,932 | - |
RFQ |
Ficha técnica |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 200 V | 200 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | |
|
|
VS-40HF80DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,113 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 800 V | 800 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
|
1N1397RDO8 100 AMP SILICON RECTIFIER Solid State Inc. |
2,861 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 100 V | 100 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
2833657DIODE MODULE 12-24VDC IN Phoenix Contact |
3,308 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | Pluggable into DIN Rail Base | - | - | - | - | - | - | - |
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