Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N4589R

1N4589R

DO8 150 AMP SILICON RECTIFIER

Solid State Inc.
3,510 -

RFQ

1N4589R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 50 µA @ 300 V 300 V 150A -65°C ~ 200°C 1.1 V @ 200 A
S40Q

S40Q

DIODE GEN PURP 1.2KV 40A DO5

GeneSiC Semiconductor
2,463 -

RFQ

S40Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 40A -65°C ~ 190°C 1.1 V @ 40 A
1N1670R

1N1670R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,967 -

RFQ

1N1670R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 50 V 50 V 275A -65°C ~ 190°C 1.3 V @ 300 A
MSC030SDA120S

MSC030SDA120S

UNRLS, FG, GEN2, SIC SBD, TO-268

Microchip Technology
2,193 -

RFQ

MSC030SDA120S

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 30A (DC) - -
1N3271

1N3271

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
3,935 -

RFQ

1N3271

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 75 µA @ 800 V 800 V 275A -65°C ~ 190°C 1.3 V @ 300 A
SCS215KGC17

SCS215KGC17

DIODE SCHOTTKY 1.2KV 15A TO220AC

Rohm Semiconductor
3,627 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 790pF @ 1V, 1MHz 0 ns 300 µA @ 1200 V 1200 V 15A (DC) 175°C 1.6 V @ 15 A
1N1675

1N1675

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
3,829 -

RFQ

1N1675

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 75 µA @ 400 V 400 V 275A -65°C ~ 190°C 1.3 V @ 300 A
GC20MPS12-220

GC20MPS12-220

SIC DIODE 1200V 20A TO-220-2

GeneSiC Semiconductor
340 -

RFQ

GC20MPS12-220

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1298pF @ 1V, 1MHz 0 ns 18 µA @ 1200 V 1200 V 94A (DC) -55°C ~ 175°C 1.8 V @ 20 A
1N4053R

1N4053R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
3,574 -

RFQ

1N4053R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 700 V 700 V 275A -65°C ~ 190°C 1.3 V @ 300 A
STPSC20H12D

STPSC20H12D

DIODE SCHOTTKY 1.2KV 20A TO220AC

STMicroelectronics
3,555 -

RFQ

STPSC20H12D

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1650pF @ 0V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 20A -40°C ~ 175°C 1.5 V @ 20 A
1N4051R

1N4051R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,382 -

RFQ

1N4051R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 500 V 500 V 275A -65°C ~ 190°C 1.3 V @ 300 A
SCS220KGC17

SCS220KGC17

DIODE SCHOTTKY 1.2KV 20A TO220AC

Rohm Semiconductor
2,895 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1050pF @ 1V, 1MHz 0 ns 400 µA @ 1200 V 1200 V 20A (DC) 175°C 1.6 V @ 20 A
1N1676

1N1676

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,303 -

RFQ

1N1676

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 75 µA @ 500 V 500 V 275A -65°C ~ 190°C 1.3 V @ 300 A
1N1184A

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor
3,808 -

RFQ

1N1184A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 40A -65°C ~ 200°C 1.1 V @ 40 A
1N3738R

1N3738R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,615 -

RFQ

1N3738R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 400 V 400 V 275A -65°C ~ 190°C 1.3 V @ 300 A
VS-85HFR40

VS-85HFR40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,355 -

RFQ

VS-85HFR40

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 400 V 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N4049R

1N4049R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,167 -

RFQ

1N4049R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 300 V 300 V 275A -65°C ~ 190°C 1.3 V @ 300 A
VS-72HF120

VS-72HF120

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division
2,527 -

RFQ

VS-72HF120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 70A -65°C ~ 180°C 1.35 V @ 220 A
1N3170

1N3170

DO9 240 AMP SILICON RECTIFIER

Solid State Inc.
2,990 -

RFQ

1N3170

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 75 µA @ 600 V 600 V 240A -65°C ~ 200°C 1.25 V @ 240 A
1N3214

1N3214

DIODE GEN PURP 600V 15A DO5

GeneSiC Semiconductor
2,353 -

RFQ

1N3214

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 15A -65°C ~ 175°C 1.5 V @ 15 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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