Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HSM3100JE3/TR13

HSM3100JE3/TR13

DIODE SCHOTTKY 100V 3A DO214AB

Microchip Technology
2,147 -

RFQ

HSM3100JE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 175°C 810 mV @ 3 A
DUR75120W

DUR75120W

DIODE GEN PURP 1.2KV 75A TO247AC

Littelfuse Inc.
2,752 -

RFQ

DUR75120W

Ficha técnica

Tube DUR RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 650 µA @ 1200 V 1200 V 75A -55°C ~ 150°C 3.5 V @ 60 A
VS-16FL60S05

VS-16FL60S05

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division
3,861 -

RFQ

VS-16FL60S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.4 V @ 16 A
VS-HFA04SD60SHM3

VS-HFA04SD60SHM3

DIODE GEN PURP 600V 4A TO252

Vishay General Semiconductor - Diodes Division
2,864 -

RFQ

VS-HFA04SD60SHM3

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 42 ns 3 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.8 V @ 4 A
1N5616

1N5616

DIODE GEN PURP 400V 2A AXIAL

Semtech Corporation
2,738 -

RFQ

1N5616

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 23pF @ 5V, 1MHz 2 µs 500 nA @ 400 V 400 V 2A -65°C ~ 175°C 1.1 V @ 1 A
VS-70HFR30

VS-70HFR30

DIODE GEN PURP 300V 70A DO203AB

Vishay General Semiconductor - Diodes Division
3,098 -

RFQ

VS-70HFR30

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 300 V 70A -65°C ~ 180°C 1.35 V @ 220 A
HSM380GE3/TR13

HSM380GE3/TR13

DIODE SCHOTTKY 80V 3A DO215AB

Microchip Technology
3,274 -

RFQ

HSM380GE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 3A -55°C ~ 175°C 810 mV @ 3 A
2833880

2833880

DIODE MODULE W/VARISTOR

Phoenix Contact
3,076 -

RFQ

2833880

Ficha técnica

Bulk RoHS - - Active Pluggable into DIN Rail Base - - - - - - -
1N5551

1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology
3,558 -

RFQ

1N5551

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.2 V @ 9 A
MBRD330T4G

MBRD330T4G

DIODE SCHOTTKY 30V 3A DPAK

onsemi
2,310 -

RFQ

MBRD330T4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 200 µA @ 30 V 30 V 3A -65°C ~ 150°C 600 mV @ 3 A
1N5617

1N5617

DIODE GEN PURP 400V 2A AXIAL

Semtech Corporation
2,560 -

RFQ

1N5617

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 5V, 1MHz 150 ns 500 nA @ 400 V 400 V 2A -65°C ~ 175°C 1.2 V @ 1 A
1N5186

1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology
2,130 -

RFQ

1N5186

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 2 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.5 V @ 9 A
1N3272R

1N3272R

DO9 275 AMP SILICON RECTIFIER

Solid State Inc.
2,450 -

RFQ

1N3272R

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 75 µA @ 900 V 900 V 275A -65°C ~ 190°C 1.3 V @ 300 A
VS-85HF100

VS-85HF100

DIODE GEN PURP 1KV 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,700 -

RFQ

VS-85HF100

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 1000 V 1000 V 85A -65°C ~ 180°C 1.2 V @ 267 A
GC9702-15

GC9702-15

GC9702-15

WEC
3,634 -

RFQ

Bulk RoHS - - Active - - - - - - - -
1N2131AR

1N2131AR

DIODE GEN PURP REV 200V 60A DO5

GeneSiC Semiconductor
2,442 -

RFQ

1N2131AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 60A -65°C ~ 200°C 1.1 V @ 60 A
D1600U45X122XPSA1

D1600U45X122XPSA1

HIGH POWER THYR / DIO

Rochester Electronics, LLC
2,297 -

RFQ

D1600U45X122XPSA1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
HSM380JE3/TR13

HSM380JE3/TR13

DIODE SCHOTTKY 80V 3A DO214AB

Microchip Technology
2,966 -

RFQ

HSM380JE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 3A -55°C ~ 175°C 810 mV @ 3 A
JANTX1N5617US/TR

JANTX1N5617US/TR

RECTIFIER UFR,FRR

Microchip Technology
2,443 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 35pF @ 12V, 1MHz 150 ns 500 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-25FR100

VS-25FR100

DIODE GEN PURP 1KV 25A DO203AA

Vishay General Semiconductor - Diodes Division
3,315 -

RFQ

VS-25FR100

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 1000 V 1000 V 25A -65°C ~ 175°C 1.3 V @ 78 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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