Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-ETX1506STRR-M3

VS-ETX1506STRR-M3

DIODE GEN PURP 600V 15A TO263AB

Vishay General Semiconductor - Diodes Division
3,814 -

RFQ

VS-ETX1506STRR-M3

Ficha técnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 20 ns 36 µA @ 600 V 600 V 15A -65°C ~ 175°C 3.4 V @ 15 A
JAN1N5802

JAN1N5802

D MET 2.5A SFST 50V TRR 25NS HR

Semtech Corporation
3,216 -

RFQ

Bulk RoHS - - Active - - - - - - - -
1N6638U/TR

1N6638U/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,639 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/578 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2.5pF @ 0V, 1MHz 4.5 ns 500 nA @ 150 V 125 V 300mA (DC) -65°C ~ 175°C 1.1 V @ 200 mA
VB30100S-M3/4W

VB30100S-M3/4W

DIODE SCHOTTKY 30A 100V TO-263AB

Vishay General Semiconductor - Diodes Division
3,546 -

RFQ

VB30100S-M3/4W

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 100 V 100 V 30A -40°C ~ 150°C 910 mV @ 30 A
JAN1N5419US

JAN1N5419US

DIODE GEN PURP 500V 3A D5B

Microchip Technology
3,812 -

RFQ

JAN1N5419US

Ficha técnica

Bulk Military, MIL-PRF-19500/411 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 250 ns 1 µA @ 500 V 500 V 3A -65°C ~ 175°C 1.5 V @ 9 A
S16Q

S16Q

DIODE GEN PURP 1.2KV 16A DO203AA

GeneSiC Semiconductor
2,422 -

RFQ

S16Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
UGF8JTHE3_A/P

UGF8JTHE3_A/P

DIODE GEN PURP 600V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
2,675 -

RFQ

UGF8JTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 30 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.75 V @ 8 A
JAN1N5804

JAN1N5804

D MET 2.5A SFST 100V HR

Semtech Corporation
2,110 -

RFQ

Bulk RoHS - - Active - - - - - - - -
VS-40HF140

VS-40HF140

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division
2,526 -

RFQ

VS-40HF140

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 40A -65°C ~ 160°C 1.5 V @ 125 A
VS-8TQ080STRR-M3

VS-8TQ080STRR-M3

DIODE SCHOTTKY 80V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,297 -

RFQ

VS-8TQ080STRR-M3

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 500pF @ 5V, 1MHz - 550 µA @ 80 V 80 V 8A -55°C ~ 175°C 720 mV @ 8 A
CDLL5819E3/TR

CDLL5819E3/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
3,909 -

RFQ

CDLL5819E3/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
S16QR

S16QR

DIODE GEN PURP 1.2KV 16A DO220AA

GeneSiC Semiconductor
2,652 -

RFQ

S16QR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
VS-HFA04SD60SLHM3

VS-HFA04SD60SLHM3

DIODE GEN PURP 600V 4A TO252

Vishay General Semiconductor - Diodes Division
3,536 -

RFQ

VS-HFA04SD60SLHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 42 ns 3 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.8 V @ 4 A
JAN1N5806

JAN1N5806

D MET 6A SFST 50V

Semtech Corporation
3,722 -

RFQ

Bulk RoHS - - Active - - - - - - - -
FJH1101

FJH1101

DIODE GEN PURP 15V 150MA DO35

onsemi
4,930 -

RFQ

FJH1101

Ficha técnica

Bulk,Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz - 15 pA @ 15 V 15 V 150mA (DC) 175°C (Max) 1.1 V @ 50 mA
STPSC2H065BY-TR

STPSC2H065BY-TR

DFD THYR TRIAC & RECTIFIER

STMicroelectronics
2,001 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101, ECOPACK®2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 135pF @ 0V, 1MHz 0 ns 20 µA @ 650 V 650 V 2A -40°C ~ 175°C 1.55 V @ 2 A
JANTX1N6640US/TR

JANTX1N6640US/TR

SWITCHING

Microchip Technology
2,839 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/609 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 4 ns 100 nA @ 50 V 50 V 300mA -65°C ~ 175°C 1 V @ 200 mA
1N5806/TR

1N5806/TR

UFR,FRR

Microchip Technology
2,191 -

RFQ

1N5806/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 2.5A -65°C ~ 175°C 975 mV @ 2.5 A
VS-HFA04SD60SRHM3

VS-HFA04SD60SRHM3

DIODE GEN PURP 600V 4A TO252

Vishay General Semiconductor - Diodes Division
2,440 -

RFQ

VS-HFA04SD60SRHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 42 ns 3 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.8 V @ 4 A
1N5614

1N5614

DIODE GEN PURP 200V 2A AXIAL

Semtech Corporation
3,627 -

RFQ

1N5614

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 23pF @ 5V, 1MHz 2 µs 500 nA @ 200 V 200 V 2A -65°C ~ 175°C 1.1 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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