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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK33BHM4GDIODE SCHOTTKY 30V 3A DO214AA Taiwan Semiconductor Corporation |
3,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
SR215 R0GDIODE SCHOTTKY 150V 2A DO204AC Taiwan Semiconductor Corporation |
2,794 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SK34BHM4GDIODE SCHOTTKY 40V 3A DO214AA Taiwan Semiconductor Corporation |
3,189 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
|
SR220 R0GDIODE SCHOTTKY 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,958 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
1N4448W RHGDIODE GEN PURP 75V 150MA SOD123F Taiwan Semiconductor Corporation |
2,222 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 75 V | 150mA (DC) | -65°C ~ 150°C | 1 V @ 100 mA | |
|
|
SK36BHM4GDIODE SCHOTTKY 60V 3A DO214AA Taiwan Semiconductor Corporation |
3,861 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
1N4448WS RRGDIODE GEN PURP 100V 150MA SOD323 Taiwan Semiconductor Corporation |
2,245 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA | |
|
ESH1B M2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,910 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 15 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
ESH1C M2GDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
3,383 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 15 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 950 mV @ 1 A | |
|
|
ESH1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,729 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 15 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
FR205G R0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
FR206G R0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
2,220 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
FR207G R0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,262 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
ES1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,916 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
HER104G R0GDIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation |
2,701 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
HER106G R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,668 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HER107G R0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,188 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HER108G R0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,593 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SF2L8GHR0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,032 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
MUR160A R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,273 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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